5秒后页面跳转
GBJ2501 PDF预览

GBJ2501

更新时间: 2024-01-05 01:56:14
品牌 Logo 应用领域
平伟 - PINGWEI /
页数 文件大小 规格书
1页 43K
描述
GLASS PASSIVATED BRIDGE RECTIFIER

GBJ2501 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.81
配置:BRIDGE, 4 ELEMENTS二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 V最大非重复峰值正向电流:350 A
元件数量:4最高工作温度:150 °C
最大输出电流:25 A峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:100 V子类别:Bridge Rectifier Diodes
表面贴装:NO处于峰值回流温度下的最长时间:NOT SPECIFIED

GBJ2501 数据手册

  
CHONGQING PINGYANG ELECTRONICS CO.,LTD.  
GBJ25005 THRU GBJ2510  
GLASS PASSIVATED BRIDGE RECTIFIER  
VOLTAGE50-1000V  
CURRENT25.0A  
FEATURES  
·Low leakage  
·Low forward voltage  
GBJ  
.189(4.8)  
.173(4.4)  
1.193(30.3)  
1.169(29.7)  
HOLE FOR NO.  
.150(3.8)  
.134(3.4)  
6 SCREW  
·Surge overload ratings-350 Amperes  
.119  
(0.5)  
.800(20.3)  
.697(17.7)  
.441(11.2)  
.184(3.4)  
.122(3.1)  
.425(10.8)  
+ ~ ~ -  
.106(2.7)  
.096(2.3)  
.094(2.4)  
.078(2.0)  
.043(1.1)  
.035(0.9)  
.114(2.9)  
.098(2.5)  
.708(18.0)  
.669(17.0)  
.165(4.2)  
.150(3.8)  
.031(0.8)  
.023(0.6)  
MECHANICAL DATA  
·Case: Molded plastic  
.402(1.1)  
.386(0.9)  
.303(7.7)  
.287(7.3)  
.303(7.7)  
.287(7.3)  
·Epoxy: UL 94V-0 rate flame retardant  
·Lead: MIL-STD- 202E, Method 208 guaranteed  
·Polarity: Symbols molded or marked on body  
·Mounting: Thru hole for 6# screw  
·Weight: 6.6 grams  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ GBJ GBJ GBJ GBJ GBJ GBJ  
25005 2501 2502 2504 2506 2508 2510  
units  
SYMBOL  
VRRM  
VRMS  
VDC  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
Maximum Average Forward rectified Output  
Current at TC=100°C  
Io  
25  
A
A
V
Peak Forward Surge Current 8.3ms single half  
sine-wave superimposed on rate load (JEDEC  
method)  
IFSM  
350  
Maximum Forward Voltage Drop per element at  
12.5 A DC  
VF  
1.05  
10  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
per element  
@ TA=25°C  
IR  
µA  
500  
@ TA=125°C  
I2t  
CJ  
510  
85  
A2Sec  
pF  
I2t Rating for Fusing (t<8.3ms)  
Typical Junction Capacitance per Element(Note 1)  
Typical Thermal Resistance, Junction to Case  
(Note 2)  
RθJA  
2.7  
°C/W  
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.  
2. Thermal resistance from junction to case per element. Unit mounted on 150 x 150 x 1.6mm copper plate heat sink.  
PDF 文件使用 "pdfFactory Pro" 试用版本创建 www.fineprint.cn  

与GBJ2501相关器件

型号 品牌 获取价格 描述 数据表
GBJ2501-03-G COMCHIP

获取价格

Bridge Rectifier Diode, 25A, 100V V(RRM),
GBJ2501-05-G COMCHIP

获取价格

Bridge Rectifier Diode, 25A, 100V V(RRM),
GBJ2501-06-G COMCHIP

获取价格

Bridge Rectifier Diode, 25A, 100V V(RRM),
GBJ2501A DYELEC

获取价格

SINGLE PHASE 25AMP GLASS PASSIVATED BRIDGE RECTIFIER
GBJ2501A YANGJIE

获取价格

Bridge Rectifiers
GBJ2501AB1 YANGJIE

获取价格

Bridge Rectifier Diode, 1 Phase, 3.5A, 100V V(RRM), Silicon,
GBJ2501-BP MCC

获取价格

25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
GBJ2501-BP-HF MCC

获取价格

Bridge Rectifier Diode, 25A, 100V V(RRM),
GBJ2501F YANGJIE

获取价格

Bridge Rectifiers
GBJ2501-F DIODES

获取价格

25A GLASS PASSIVATED BRIDGE RECTIFIER