Datasheet > GBJ2010

GBJ2010

更新时间： 2025-07-19 18:51:59

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
4页	2170K
描述
Marking : YFW GBJ2010; I(AV) : 20; VRRM : 1000; IFSM : 240; VFM : 1; VFM : 20; IRM @ VRRM : 5; Trr : 1000; Package : GBJ;

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数据手册

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GBJ2010 数据手册

GBJ2001 THRU GBJ2010 GBJ

20A GLASS PASSIVATED BRIDGE RECTIFIER Reverse

Voltage - 100 to 1000 V

Forward Current – 20A

FEATURES



Surge overload rating-240 amperes peak

Polarity:As marked on body

Ideal for printed circuit board



Plastic material has U/L

The flammability classification 94V-0

Reliable low cost construction utilizing molded plastic

technique

1.Output Anode( )

2.Input pin(~)

3.Input pin( )

4.Output Cathode(-)

MECHANICAL DATA



Case: GBJ

GBJ



Terminals: Solderable per MIL-STD-202, Method 208



Approx. Weight: 6.79g / 0.24oz

Maximum Ratings and Electrical characteristics

Ratings at 25 °C ambient temperature unless otherwise specified.

Single phase half-wave 60 Hz, resistive or inductive load, for capacitive load current derate by 20 %.

GBJ2001 GBJ2002 GBJ2004 GBJ2006 GBJ2008 GBJ2010

Parameter

Symbols

V_RRM

Units

Maximum Repetitive Peak Reverse Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum RMS voltage

V_RMS

Maximum DC Blocking Voltage

V_DC

100

1000

Maximum Average Forward Rectified Current

240

1.0

I_(AV)

I_FSM

V_F

Peak Forward Surge Current 8.3 ms Single Half

Sine-Wave Superimposed on Rated Load

(JEDEC method)

Forward Voltage per element @IF =10A DC

μA

@TJ=25°C

Maximum DC Reverse Current

I_R

I²t

at Rated DC Blocking Voltage

500

@TJ=125°C

A²S

I2t Rating for Fusing(3ms≤t≤8.3ms)

200

Typical Junction Capacitance^（Note1）

Typical Thermal Resistance ^（Note2）

R_θJC

2.0

°C/W

°C

Operating and Storage Temperature Range

T_j, T_stg

-55 ~ +150

（1）Measured at 1 MHz and applied reverse voltage of 4 V D.C

（2）Device mounted on 75mm*75mm*1.6mm cu plate heatsink

www.yfwdiode.com

Rev:BDJ

1 / 4

GuangDong Youfeng Microelectronics Co.,Ltd.

12 3 4

中文翻译

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