Datasheet > GBJ15D

GBJ15D

更新时间： 2024-02-03 11:33:17

品牌	Logo	应用领域
CHENG-YI		/
页数	文件大小	规格书
2页	158K
描述
SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS

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技术参数
数据手册

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GBJ15D 技术参数

生命周期：	Active	包装说明：	R-PSFM-T4
Reach Compliance Code：	compliant	风险等级：	5.58
最小击穿电压：	1000 V	外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PSFM-T4
最大非重复峰值正向电流：	240 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	3.5 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大重复峰值反向电压：	1000 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

GBJ15D 数据手册

GBJ/KBJ15A thru GBJ/KBJ15M

SSIILLIICCOONN BBRRIIDDGGEE RREECCTTIIFFIIEERRSS

GGLLAASSSS PPAASSSSIIVVAATTEEDD

CCHHEENNGG--YYII

BBRRIIDDGGEE RREECCTTIIFFIIEERRSS

ELECTRONIC

REVERSE VOLTAGE -50 to 1000 Volts

FORWARD CURRENT -15.0 Amperes

HIKE FOR NO.

6 SCRES

5.16

FEATURES

Rating to 1000V PRV

Ideal for printed circuit board

Low forward voltage drop, high current capability

Reliable low cost construction utilizing

molded plastic technique results in

inexpensive product

SPACING

The plastic material has UL

flammability classification 94V-O

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

GBJ

KBJ

15B

GBJ

KBJ

GBJ

KBJ

15J

GBJ

KBJ

15K

GBJ

KBJ

SYMBOL

CHARACTERISTICS

KBJ

UNITS

15A

15D

15G

15M

V_RRM

V_RMS

V_DC

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

15.0

3.2

Maximum Average Forward (with heatsink Note2)

I_(AV)

Rectified Current @ ^T=100 C (without heatsink)

Peak Forward Surge Current

8.3 ms single half sine-wave

I_FSM

220

superimposed on rated load (JEDEC Method)

1.05

Maximum Forward Voltage at 7.5A DC

=25 C

Maximum DC Reverse Current

at Rated DC Blocking Voltage

I_R

=125 C

500

240

A S

I t Rating for fusing (t<8.3ms)

I t

Typical Junction Capacitance

per element (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

Storage Temperature Range

0.8

C/W

-55 to +150

T_STG

NOTES: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2. Device mounted on 300mm x 300mm X 1.6mm Cu Plate Heatsink.

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