Datasheet > GBJ10A-LF

GBJ10A-LF

更新时间： 2024-11-10 19:57:43

品牌	Logo	应用领域
WTE		局域网二极管
页数	文件大小	规格书
4页	82K
描述
Bridge Rectifier Diode, 1 Phase, 10A, 50V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ-4, 4 PIN

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GBJ10A-LF 数据手册

WTE

POWER SEMICONDUCTORS

GBJ10A – GBJ10M

10A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Recognized File # E157705

KBJ-4

Dim

Min

24.7

14.7

—

Max

25.3

15.3

4.0

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ J

17.0

3.3

18.0

3.7

3.1Ø

1.05

1.7

3.6Ø

1.45

2.1

Mechanical Data

Case: KBJ-4, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.9

1.1

1.8

2.2

Polarity: As Marked on Body

Weight: 6.0 grams (approx.)

Mounting Position: Any

Mounting Torque: 10 cm-kg (8.8 in-lbs) Max.

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

4.4

4.8

3.4

3.8

7.3

7.7

9.3

9.7

2.5

2.9

0.6

0.8

All Dimensions in mm

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

GBJ

10A

GBJ

10B

GBJ

10D

GBJ

10G

GBJ

10J

GBJ

10K

GBJ

10M

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

Average Rectified Output Current @T_C= 115°C

(Note 1)

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

170

Forward Voltage per diode

@I_F= 5.0A

V^FM

I^R

1.05

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

250

µA

Typical Thermal Resistance per leg (Note 2)

Typical Thermal Resistance per leg (Note 1)

Operating and Storage Temperature Range

R^ꢀ^JA

R^ꢀ^JC

1.9

°C/W

°C

T^j,T^STG

-55 to +150

Note: 1. Device mounted on 100 x 100 x 1.6mm thick Al plate heatsink.

2. Device mounted on P.C.B. without heatsink.

GBJ10A – GBJ10M

1 of 4

12 3 4

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与GBJ10A-LF相关器件

型号	品牌	获取价格	描述	数据表
GBJ10B	SURGE	获取价格	Bridge Rectifier Diode,
GBJ10B	WTE	获取价格	10A GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
GBJ10B	GOOD-ARK	获取价格	Glass Passivated Single-Phase Bridge Rectifiers Reverse Voltage 50 to 1000 Volts Forward C
GBJ10B	CHENG-YI	获取价格	SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS
GBJ10B	PANJIT	获取价格	GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Am
GBJ10B	WON-TOP	获取价格	Single In-Line
GBJ10BG	SHIKUES	获取价格	GLASS PASSIVATED BRIDGE RECTIFIERS
GBJ10B-LF	WTE	获取价格	Bridge Rectifier Diode, 1 Phase, 10A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, KBJ-4
GBJ10D	PANJIT	获取价格	GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Am
GBJ10D	CHENG-YI	获取价格	SILICON BRIDGE RECTIFIERS GLASS PASSIVATED BRIDGE RECTIFIERS

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