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GBJ1006 PDF预览

GBJ1006

更新时间: 2024-01-16 04:17:44
品牌 Logo 应用领域
GWSEMI 局域网二极管
页数 文件大小 规格书
2页 65K
描述
Bridge Rectifier Diode, 3A, 800V V(RRM)

GBJ1006 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:600 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBJ1006 数据手册

 浏览型号GBJ1006的Datasheet PDF文件第2页 
GBJ1001 THRU GBJ1007  
SINGLE PHASE 10.0 AMP BRIDGE RECTIFIERS  
VOLTAGE RANGE  
50 to 1000 Volts  
CURRENT  
10.0 Amperes  
GBJ  
FEATURES  
.134(3.4)  
.122(3.1)  
.203(5.2)  
.189(4.8)  
.150(3.8)  
.134(3.4)  
1.193(30.3)  
1.169(29.7)  
* Ideal for printed circuit board  
* Low forward voltage  
* Low leakage current  
* Mounting position: Any  
~
~
.114(2.9)  
.098(2.5)  
.094(2.4)  
.078(2.0)  
.043(1.1)  
.035(0.9)  
.031(0.8)  
.023(0.6)  
.402(10.2)  
.303(7.7) .303(7.7)  
SPACING  
.386(9.8)  
.287(7.3) .287(7.3)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25 C ambient temperature uniess otherwies specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
GBJ1001 GBJ1002 GBJ1003 GBJ1004 GBJ1005 GBJ1006 GBJ1007 UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC Blocking Voltage  
100  
1000  
Maximum Average Forward (with heatsink Note 2)  
10.0  
3.0  
A
A
Rectified Current at Tc=110 C (Without heatsink)  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
170  
1.05  
5.0  
A
V
Maximum Forward Voltage Drop per Bridge Element at 5.0A D.C.  
Maximum DC Reverse Current  
Ta=25 C  
A
at Rated DC Blocking Voltage  
Ta=100 C  
500  
2.3  
6.0  
A
Typical Thermal Resistance RqJC (Note 1)  
Typical Thermal Resistance RqJL (Note 2)  
Operating Temperature Range, TJ  
Storage Temperature Range, TSTG  
C/W  
C/W  
-55 +150  
-55 +150  
C
C
NOTES:  
1. Thermal Resistance from Junction to Case with device mounted on 100mm x 100mm x 1.6mm Cu Plate Heatsink.  
2. Thermal Resistance from Junction to Lead without Heatsink.  

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