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GBJ1006 PDF预览

GBJ1006

更新时间: 2024-01-10 14:43:05
品牌 Logo 应用领域
DIOTECH 二极管局域网
页数 文件大小 规格书
2页 825K
描述
GLASS PASSIVATED BRIDGE RECTIFIER

GBJ1006 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67Is Samacsys:N
其他特性:UL RECOGNIZED最小击穿电压:600 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PSFM-T4
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:170 A元件数量:4
相数:1端子数量:4
最大输出电流:10 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:600 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GBJ1006 数据手册

 浏览型号GBJ1006的Datasheet PDF文件第2页 
GBJ10005 THRU GBJ1010  
GLASS PASSIVATED BRIDGE RECTIFIER  
Reverse Voltage - 50 to 1000 Volts  
Forward Current - 10.0 Ampere  
FEATURES  
Glass passivated chip junction  
Reliable low cost construction utilizing molded  
GBJ  
plastic technique  
Ideal for printed circuit board  
Low reverse leakage current  
Low forward voltage drop  
High surge current capabiliy  
MECHANICAL DATA  
Case:Molded plastic, GBJ  
Terminals  
:
Terminals: Leads solderable per MIL-STD-202  
method 208 guaranteed  
Epoxy: UL 94V-0 rate flame retardant  
Mounting Position: Any  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
GBJ  
GBJ GBJ GBJ GBJ GBJ GBJ  
Symbols  
Units  
Parameter  
10005 1001 1002 1004 1006 1008 1010  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100 200 400 600 800 1000  
70 140 280 420 560 700  
V
V
V
Maximum DC Blocking Voltage  
100 200 400 600 800 1000  
10  
Maximum Average Forward Rectified Current with  
Heatsink at TC = 100 OC  
I(AV)  
A
Peak Forward Surge Current, 8.3 ms Single Half-Sine  
-Wave superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
170  
1.1  
A
V
Maximum Forward Voltage at 5.0 A DC and 25 OC  
Maximum Reverse Current at TA = 25OC  
at Rated DC Blocking Voltage TA = 125OC  
10  
µA  
500  
Typical Junction Capacitance 1)  
CJ  
55  
1.4  
pF  
OC/W  
OC  
Typical Thermal Resistance 2)  
RθJC  
Operating and Storage Temperature Range  
TJ,TS  
-55 to +150  
1) Measured at 1 MHz and applied reverse voltage of 4 VDC.  
2) Thermal resistance from junction to case with device mounted on 300 mm X 300 mm X 1.6 mm Cu plate  
heatsink.  

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