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GBI35D PDF预览

GBI35D

更新时间: 2024-09-25 00:56:31
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 112K
描述
Silicon-Bridge-Rectifier

GBI35D 数据手册

 浏览型号GBI35D的Datasheet PDF文件第2页 
GBI35A ... GBI35M  
GBI35A ... GBI35M  
Silicon-Bridge-Rectifiers  
Silizium-Brückengleichrichter  
Version 2014-08-09  
30±0.2  
Nominal current  
Nennstrom  
35 A  
50...1000 V  
4.6±0.2  
3.6±0.2  
Repetitive peak reverse voltage  
Type  
Typ  
Periodische Spitzensperrspannung  
Plastic case  
30 x 3.6 x 18 [mm]  
Kunststoffgehäuse  
Weight approx. – Gewicht ca.  
7 g  
2.7±0.2  
2.2  
1.0  
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
0.8  
10  
2x7.5  
Standard packaging bulk  
Standard Lieferform lose im Karton  
Dimensions - Maße [mm]  
Maximum ratings  
Grenzwerte  
Repetitive peak reverse voltage  
Periodische Spitzensperrspannung  
VRRM [V] 1)  
Type  
Typ  
Max. alternating input voltage  
Max. Eingangswechselspannung  
VVRMS [V]  
GBI35A  
GBI35B  
GBI35D  
GBI35G  
GBI35J  
GBI35K  
GBI35M  
35  
70  
50  
100  
200  
400  
600  
800  
1000  
140  
280  
420  
560  
700  
Repetitive peak forward current  
Periodischer Spitzenstrom  
f > 15 Hz  
TA = 25°C  
TA = 25°C  
IFRM  
IFSM  
i2t  
80 A 2)  
400/450 A  
800 A2s  
Peak forward surge current, 50/60 Hz half sine-wave  
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle  
Rating for fusing, t < 10 ms  
Grenzlastintegral, t < 10 ms  
Operating junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
-50...+150°C  
-50...+150°C  
Tj  
TS  
Admissible torque for mounting  
Zulässiges Anzugsdrehmoment  
M3  
7 ± 10% lb.in.  
0.8 ± 10% Nm  
1
2
Valid per diode – Gültig pro Diode  
Valid, if leads are kept to ambient temperature TA = 50°C at a distance of 5 mm from case  
Gültig, wenn die Anschlüsse in 5 mm vom Gehäuse auf Umgebungstemperatur TA = 50°C gehalten werden  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 

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