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GB6NC60H PDF预览

GB6NC60H

更新时间: 2024-11-29 03:39:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 双极性晶体管
页数 文件大小 规格书
14页 327K
描述
N-channel 600V - 7A - D2PAK Very fast PowerMESH TM IGBT

GB6NC60H 数据手册

 浏览型号GB6NC60H的Datasheet PDF文件第2页浏览型号GB6NC60H的Datasheet PDF文件第3页浏览型号GB6NC60H的Datasheet PDF文件第4页浏览型号GB6NC60H的Datasheet PDF文件第5页浏览型号GB6NC60H的Datasheet PDF文件第6页浏览型号GB6NC60H的Datasheet PDF文件第7页 
STGB6NC60H  
N-channel 600V - 7A - D2PAK  
Very fast PowerMESH™ IGBT  
General features  
IC  
VCE(sat)max  
@25°C  
Type  
VCES  
@100°C  
STGB6NC60H  
600V  
<2.5V  
7A  
Low on voltage drop (V  
)
cesat  
3
1
Low C  
/ C  
ratio (no cross-conduction  
IES  
RES  
²
susceptibility)  
D PAK  
Very soft ultra fast recovery antiparallel diode  
High frequency operation  
Description  
Using the latest high voltage technology based on  
a patented strip layout, STMicroelectronics has  
designed an advaced family of IGBTs, the  
PowerMESH™ IGBTs, with outstanding  
Internal schematic diagram  
performances. The suffix “H” identifies a family  
optimized for high frequency application in order  
to achieve very high switching performances  
(reduced tfall) mantaining a low voltage drop.  
Applications  
High frequency inverters  
SMPS and PFC in both hard switch and  
resonant topologies  
Motor drivers  
Order codes  
Part number  
Marking  
Package  
Packaging  
STGB6NC60HT4  
GB6NC60H  
PAK  
Tape & reel  
July 2006  
Rev 2  
1/14  
www.st.com  
14  

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