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GB50RF60K PDF预览

GB50RF60K

更新时间: 2024-11-19 21:20:11
品牌 Logo 应用领域
威世 - VISHAY
页数 文件大小 规格书
15页 239K
描述
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, ECONO2PIM-24

GB50RF60K 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, ECONO2PIM-24针数:24
Reach Compliance Code:unknownECCN代码:EAR99
Factory Lead Time:20 weeks 1 day风险等级:5.82
外壳连接:ISOLATED最大集电极电流 (IC):80 A
集电极-发射极最大电压:600 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X24
JESD-609代码:e3元件数量:7
端子数量:24最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):215 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:MATTE TIN OVER NICKEL (197)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT APPLICABLE晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):341 ns
标称接通时间 (ton):288 nsBase Number Matches:1

GB50RF60K 数据手册

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GB50RF60K  
Vishay High Power Products  
IGBT PIM Module, 48 A  
FEATURES  
• Low VCE(on) non punch through IGBT technology  
• Low diode VF  
• 10 µs short circuit capability  
• Square RBSOA  
RoHS  
COMPLIANT  
• HEXFRED® antiparallel diode with ultrasoft  
reverse recovery characteristics  
• Positive VCE(on) temperature coefficient  
• Ceramic DBC substrate  
• Low stray inductance design  
• Speed 8 to 60 kHz  
ECONO2 PIM  
• Totally lead (Pb)-free  
• Designed and qualified for industrial market  
PRODUCT SUMMARY  
BENEFITS  
VCES  
600 V  
2.00 V  
> 10 µs  
48 A  
• Benchmark efficiency for motor control  
• Rugged transient performance  
• Low EMI, requires less snubbing  
• Direct mounting to heatsink  
• PCB solderable terminals  
V
CE(on) (typical)  
t
sc at TJ = 150 °C  
IC at TC = 80 °C  
• Low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCES  
TEST CONDITIONS  
MAX.  
600  
20  
UNITS  
Collector to emitter voltage  
Gate to emitter voltage  
V
VGES  
TC = 25 °C  
C = 80 °C  
80  
Continuous collector current  
IC  
A
A
T
48  
Inverter  
Pulsed collector current  
See fig. C.T.5  
ICM  
160  
Diode maximum forward current  
Power dissipation  
IFM  
PD  
Pulsed  
One IGBT  
160  
215  
800  
50  
A
W
V
25 °C  
Repetitive peak reverse voltage  
VRRM  
IF(AV)  
IFSM  
I2t  
Average output current  
Surge current (non-repetitive)  
I2t (non-repetitive)  
50/60 Hz sine pulse 80 °C  
Input  
Rectifier  
A
A2s  
V
310  
525  
600  
20  
Rated VRRM applied, 10 ms,  
sine pulse  
Collector to emitter voltage  
Gate to emitter voltage  
VCES  
VGES  
TC = 25 °C  
40  
Continuous collector current  
IC  
A
A
T
C = 80 °C  
20  
Pulsed collector current  
See fig. C.T.5  
ICM  
80  
Brake  
Power dissipation  
PD  
VRRM  
TJ  
One IGBT  
AC (1 min)  
25 °C  
111  
600  
W
V
Repetitive peak reverse voltage  
Maximum operating junction temperature  
Storage temperature range  
Isolation voltage  
150  
°C  
V
TStg  
VISOL  
- 40 to + 125  
2500  
Document Number: 94480  
Revision: 10-Sep-08  
For technical questions, contact: ind-modules@vishay.com  
www.vishay.com  
1

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