Datasheet > GB50RF60K

GB50RF60K

更新时间： 2024-11-11 19:51:55

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
13页	876K
描述
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES

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GB50RF60K 数据手册

Bulletin I27309 01/07

GB50RF60K

IGBT PIM MODULE

Features

V_CES= 600V

• Low V_CE(on) Non Punch Through IGBT Technology

I_C= 48A @ T_C=80°C

t_sc> 10μs @ T_J=150°C

V_CE(on)typ. = 2.00V

• Low Diode V_F

• 10μs Short Circuit Capability

• Square RBSOA

• HEXFRED Antiparallel Diode with Ultrasoft

Reverse Recovery Characteristics

• Positive V_CE(on) Temperature Coefficient

• Ceramic DBC Substrate

ECONO2 PIM

• Low Stray Inductance Design

• TOTALLYLEAD-FREE

Benefits

• Benchmark Efficiency for Motor Control

• Rugged Transient Performance

• Low EMI, Requires Less Snubbing

• Direct Mounting to Heatsink

• PCBSolderableTerminals

• Low Junction to Case Thermal Resistance

Absolute Maximum Ratings

Parameter

Symbol

VCES

TestConditions

Ratings

600

Units

Inverter

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage

Collector Current

VGES

±20

ICM

Continuos

25°C / 80°C

80 / 48

160

Pulsed

25°C

Diode Maximum Forward Current

Power Dissipation

IFM

160

OneIGBT

215

Input Rectifier Repetitive Peak Reverse Voltage

Average Output Current

VRRM

IF(AV)

IFSM

I²t

800

50/60Hz sine pulse

80°C

Surge Current (Non Repetitive)

I²t (Non Repetitive)

Rated VRRM applied, 10ms,

sine pulse

310

525

A²s

Brake

Collector-to-Emitter Voltage

Gate-to-Emitter Voltage

Collector Current

VCES

VGES

600

±20

Continuous

25°C / 80°C

25°C

40 / 20

ICM

Pulsed

Power Dissipation

OneIGBT

25°C

111

Repetitive Peak Reverse Voltage

Maximum Operating Junction Temperature

Storage Temperature Range

Isolation Voltage

VRRM

600

150

°C

TSTG

VISOL

-40 to +125

2500

AC (1 min)

Thermal and Mechanical Characteristics

Parameter

Symbol

RθJC

Min

Typical

Maximum

0.58

1.25

2.13

1.13

1.03

Units

Junction-to-Case Inverter IGBT Thermal Resistance

Junction-to-Case Inverter FRED Thermal Resistance

Junction-to-Case Brake DIODE Thermal Resistance

Junction-to-Case Brake IGBT Thermal Resistance

Junction-to-Case Input Rectifier Thermal Resistance

Case-to-Sink, flat, greased surface

Mounting Torque (M5)

°C/W

RθCS

0.05

2.7

3.3

Weight

170

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