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GB504P PDF预览

GB504P

更新时间: 2024-11-12 01:11:51
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 1288K
描述
50 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators

GB504P 数据手册

 浏览型号GB504P的Datasheet PDF文件第2页浏览型号GB504P的Datasheet PDF文件第3页 
                      
                       
                      
                       
                      
                       
                      
                       
                      
                      
                      
                      
                      
                      
                      
                      
                      
                      
GB502N thru GB506N  
GB502N/GB503N/GB504N/GB505N/GB506N  
Pb Free Plating Product  
50 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators  
BLOCK/TO-230/BA/MR/K series  
Feature:  
Low leakage  
Low forward voltage drop  
High current capability  
High forward surge current capability  
Application:  
Block Diode/Alternator Diode with AEC-Q101 Grade Quality  
Stack Silicon Diffused Diode alternative  
Special for Automotive AC Alternator rectifier application  
Mechanical Data:  
Technology: Latest Glass Passivation Pellet/Cu Clip Bonding  
Case: Vacuum soldered/sintered temperature < 260  
Cathode Polarity: As marked on body  
Lead: Plated lead, solderable per MIL-STD-202E method 208C  
Mounting: BLOCK/TO-230/BA/MR/K series package type  
GB502P  
GB503P  
GB504P  
GB505P  
GB506P  
Positive  
Suffix:"P"  
GB502N  
GB503N  
GB504N  
GB505N  
GB506N  
Negative  
Suffix:"N"  
Case  
Lead  
Case  
Lead  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
·
·
·
Ratings at 25ambient temperature unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
SYMBOLS  
UNIT  
Volts  
Volts  
Volts  
GB502N GB503N GB504N GB505N GB506N  
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current,  
At TC = 105  
50  
Io  
Amps  
Peak Forward Surge Current  
8.3mS single half sine wave superimposed on  
rated load (JEDEC method)  
600  
IFSM  
Amps  
I2t  
1494  
1.08  
A2S  
Rating for fusing (t<8.3ms)  
Maximum Instantaneous Forward Voltage Drop at 100A  
VF  
Volts  
Maximum DC Reverse Current at Rated TA=25℃  
5.0  
IR  
µA  
DC Blocking Voltage  
TA=100℃  
450  
Typical Thermal Resistance  
/W  
RθJL  
1.0  
Operating and Storage Temperature Rang  
TJ, TSTG  
(-65 to +175)  
NOTES:  
1.Enough heatsink must be considered in application.  
Page 1/3  
http://www.thinkisemi.com.tw/  
Rev.10T  
© 1995 Thinki Semiconductor Co., Ltd.  

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