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GB200TS60NPBF PDF预览

GB200TS60NPBF

更新时间: 2024-01-02 12:56:14
品牌 Logo 应用领域
威世 - VISHAY 双极性晶体管
页数 文件大小 规格书
9页 202K
描述
INT-A-PAK 'Half-Bridge' (Ultrafast Speed IGBT), 209 A

GB200TS60NPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:ROHS COMPLIANT, INT-A-PAK-7
针数:7Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):209 A集电极-发射极最大电压:600 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X5元件数量:2
端子数量:5最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):781 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):630 ns标称接通时间 (ton):640 ns
Base Number Matches:1

GB200TS60NPBF 数据手册

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GB200TS60NPbF  
Vishay High Power Products  
INT-A-PAK "Half-Bridge"  
(Ultrafast Speed IGBT), 209 A  
FEATURES  
• Generation 5 Non Punch Through (NPT)  
technology  
• Ultrafast: Optimized for hard switching speed  
8 kHz to 60 kHz  
• Low VCE(on)  
• 10 μs short circuit capability  
• Square RBSOA  
• Positive VCE(on) temperature coefficient  
• HEXFRED® antiparallel diode with ultrasoft reverse  
recovery characteristics  
INT-A-PAK  
• Industry standard package  
• Al2O3 DBC  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
• Designed for industrial level  
PRODUCT SUMMARY  
VCES  
600 V  
209 A  
2.6 V  
BENEFITS  
IC DC  
• Benchmark efficiency for UPS and welding application  
• Rugged transient performance  
• Direct mounting on heatsink  
VCE(on) at 200 A, 25 °C  
• Very low junction to case thermal resistance  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
600  
209  
142  
400  
400  
178  
121  
20  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
Pulsed collector current  
ICM  
ILM  
A
Clamped inductive load current  
TC = 25 °C  
TC = 80 °C  
Diode continuous forward current  
Gate to emitter voltage  
IF  
VGE  
PD  
V
W
V
TC = 25 °C  
781  
438  
2500  
Maximum power dissipation  
Isolation voltage  
T
C = 80 °C  
VISOL  
Any terminal to case, t = 1 minute  
Document Number: 94503  
Revision: 04-May-10  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1

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