型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GAMW5V020TMT | GALAXY |
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48V Input, 5VDC, 20A Output | |
GAMW5V020TST | GALAXY |
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48V Input, 5VDC, 20A Output | |
GAN039-650NBB | NEXPERIA |
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650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 packageDevelopment | |
GAN039-650NBBA | NEXPERIA |
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650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 packageDevelopment | |
GAN039-650NTB | NEXPERIA |
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650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i packageDevelopment | |
GAN039-650NTBA | NEXPERIA |
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650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i packageDevelopment | |
GAN041-650WSB | NEXPERIA |
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650 V, 35 mΩ Gallium Nitride (GaN) FET in a T | |
GAN063-650WSA | NEXPERIA |
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650 V, 50 mΩ Gallium Nitride (GaN) FETProduct | |
GAN080-650EBE | NEXPERIA |
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650 V, 80 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm packageProduction | |
GAN140-650EBE | NEXPERIA |
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650 V, 140 mOhm Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm packageProduction |