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GAL20V8B-25LJ PDF预览

GAL20V8B-25LJ

更新时间: 2024-09-19 22:51:03
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莱迪思 - LATTICE /
页数 文件大小 规格书
23页 309K
描述
High Performance E2CMOS PLD Generic Array Logic

GAL20V8B-25LJ 数据手册

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GAL20V8  
High Performance E2CMOS PLD  
Generic Array Logic™  
Features  
Functional Block Diagram  
HIGH PERFORMANCE E2CMOS® TECHNOLOGY  
5 ns Maximum Propagation Delay  
Fmax = 166 MHz  
I/CLK  
I
IMUX  
I
CLK  
4 ns Maximum from Clock Input to Data Output  
UltraMOS® Advanced CMOS Technology  
I/O/Q  
8
8
OLMC  
50% to 75% REDUCTION IN POWER FROM BIPOLAR  
75mA Typ Icc on Low Power Device  
45mA Typ Icc on Quarter Power Device  
I
I
I
I
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
OLMC  
ACTIVE PULL-UPS ON ALL PINS  
E2 CELL TECHNOLOGY  
Reconfigurable Logic  
Reprogrammable Cells  
100% Tested/100% Yields  
High Speed Electrical Erasure (<100ms)  
20 Year Data Retention  
8
8
8
EIGHT OUTPUT LOGIC MACROCELLS  
Maximum Flexibility for Complex Logic Designs  
Programmable Output Polarity  
I
I
Also Emulates 24-pin PAL® Devices with Full Function/  
Fuse Map/Parametric Compatibility  
8
8
8
PRELOAD AND POWER-ON RESET OF ALL REGISTERS  
100% Functional Testability  
I
APPLICATIONS INCLUDE:  
DMA Control  
State Machine Control  
High Speed Graphics Processing  
Standard Logic Speed Upgrade  
OLMC  
IMUX  
I
I
OE  
I
I/OE  
ELECTRONIC SIGNATURE FOR IDENTIFICATION  
Description  
Pin Configuration  
The GAL20V8C, at 5ns maximum propagation delay time, com-  
bines a high performance CMOS process with Electrically Eras-  
able (E2) floating gate technology to provide the highest speed  
performance available in the PLD market. High speed erase times  
(<100ms) allow the devices to be reprogrammed quickly and ef-  
ficiently.  
DIP  
PLCC  
1
Vcc  
I
24  
I/CLK  
I
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I/O/Q  
I
I
I
I
I
4
2
28  
26  
GAL  
The generic architecture provides maximum design flexibility by  
allowing the Output Logic Macrocell (OLMC) to be configured by  
the user. An important subset of the many architecture configura-  
tions possible with the GAL20V8 are the PAL architectures listed  
in the table of the macrocell description section. GAL20V8 devices  
are capable of emulating any of these PAL architectures with full  
function/fuse map/parametric compatibility.  
5
7
I
I
I
25 I/O/Q  
20V8  
I/O/Q  
23  
I/O/Q  
NC  
6
GAL20V8  
Top View  
NC  
18  
I
I
I
I
I
9
21 I/O/Q  
I/O/Q  
I
I
I
11  
19  
18  
I/O/Q  
12  
14  
16  
Unique test circuitry and reprogrammable cells allow completeAC,  
DC, and functional testing during manufacture. As a result, Lattice  
Semiconductor delivers 100% field programmability and function-  
ality of all GAL products. In addition, 100 erase/write cycles and  
data retention in excess of 20 years are specified.  
12  
13 I/OE  
GND  
Copyright © 2000 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject  
to change without notice.  
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.  
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com  
August 2000  
20v8_04  
1

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