是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | PLASTIC, DIP-24 | 针数: | 24 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.75 |
Is Samacsys: | N | 其他特性: | REGISTER PRELOAD; POWER-UP RESET |
架构: | PAL-TYPE | 最大时钟频率: | 45 MHz |
JESD-30 代码: | R-PDIP-T24 | JESD-609代码: | e0 |
长度: | 31.75 mm | 专用输入次数: | 10 |
I/O 线路数量: | 10 | 输入次数: | 20 |
输出次数: | 10 | 产品条款数: | 80 |
端子数量: | 24 | 最高工作温度: | 75 °C |
最低工作温度: | 组织: | 10 DEDICATED INPUTS, 10 I/O | |
输出函数: | MACROCELL | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP24,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 225 | 电源: | 5 V |
可编程逻辑类型: | EE PLD | 传播延迟: | 15 ns |
认证状态: | Not Qualified | 座面最大高度: | 5.334 mm |
子类别: | Programmable Logic Devices | 最大供电电压: | 5.25 V |
最小供电电压: | 4.75 V | 标称供电电压: | 5 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | COMMERCIAL EXTENDED | 端子面层: | Tin/Lead (Sn85Pb15) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GAL20RA10B-20LJ | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-20LJ | ROCHESTER |
获取价格 |
EE PLD, 20ns, PQCC28, PLASTIC, LCC-28 | |
GAL20RA10B-20LJI | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-20LP | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-20LPI | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-30LJ | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-30LJ | ROCHESTER |
获取价格 |
EE PLD, 30 ns, PQCC28, PLASTIC, LCC-28 | |
GAL20RA10B-30LP | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-7LJ | LATTICE |
获取价格 |
High-Speed Asynchronous E2CMOS PLD Generic Ar | |
GAL20RA10B-7LJ | ROCHESTER |
获取价格 |
EE PLD, 7.5 ns, PQCC28, PLASTIC, LCC-28 |