GAL16V8
High Performance E2CMOS PLD
Generic Array Logic™
Features
Functional Block Diagram
I/CLK
• HIGH PERFORMANCE E2CMOS® TECHNOLOGY
— 3.5 ns Maximum Propagation Delay
— Fmax = 250 MHz
CLK
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
8
8
OLMC
— 3.0 ns Maximum from Clock Input to Data Output
— UltraMOS® Advanced CMOS Technology
I
I
I
I
I
I
I
I
• 50% to 75% REDUCTION IN POWER FROM BIPOLAR
— 75mA Typ Icc on Low Power Device
— 45mA Typ Icc on Quarter Power Device
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
OLMC
• ACTIVE PULL-UPS ON ALL PINS
• E2 CELL TECHNOLOGY
— Reconfigurable Logic
— Reprogrammable Cells
— 100% Tested/100% Yields
— High Speed Electrical Erasure (<100ms)
— 20 Year Data Retention
8
8
8
8
8
8
• EIGHT OUTPUT LOGIC MACROCELLS
— Maximum Flexibility for Complex Logic Designs
— Programmable Output Polarity
— Also Emulates 20-pin PAL® Devices with Full
Function/Fuse Map/Parametric Compatibility
• PRELOAD AND POWER-ON RESET OF ALL REGISTERS
— 100% Functional Testability
• APPLICATIONS INCLUDE:
— DMA Control
— State Machine Control
— High Speed Graphics Processing
— Standard Logic Speed Upgrade
I/O/Q
I/OE
OE
• ELECTRONIC SIGNATURE FOR IDENTIFICATION
Pin Configuration
PLCC
I/CLK Vcc I/O/Q
Description
I
I
2
20
The GAL16V8, at 3.5 ns maximum propagation delay time, com-
bines a high performance CMOS process with Electrically Eras-
able (E2) floating gate technology to provide the highest speed
performance available in the PLD market. High speed erase times
(<100ms) allow the devices to be reprogrammed quickly and ef-
ficiently.
DIP
18
16
I/O/Q
4
6
I
I/O/Q
I/O/Q
I
1
20
Vcc
I/CLK
GAL16V8
Top View
I
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
I
I/O/Q
I/O/Q
I
I
I
GAL
14
I
8
The generic architecture provides maximum design flexibility by
allowing the Output Logic Macrocell (OLMC) to be configured by
the user. An important subset of the many architecture configura-
tions possible with the GAL16V8 are the PAL architectures listed
in the table of the macrocell description section. GAL16V8 devices
are capable of emulating any of these PAL architectures with full
function/fuse map/parametric compatibility.
9
I
11
13
16V8
GND I/OE I/O/Q I/O/Q
5
I
I
SOIC
15
I/CLK
I
1
20
Vcc
I
I
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/O/Q
I/OE
I
I
GAL
16V8
Top
Unique test circuitry and reprogrammable cells allow complete AC,
DC, and functional testing during manufacture. As a result, Lattice
Semiconductor delivers 100% field programmability and function-
ality of all GAL products. In addition, 100 erase/write cycles and
data retention in excess of 20 years are specified.
5
I
I
I
15
11
10
11
GND
View
I
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I
10
GND
Copyright © 2001 Lattice Semiconductor Corp. All brand or product names are trademarks or registered trademarks of their respective holders. The specifications and information herein are subject
to change without notice.
LATTICE SEMICONDUCTOR CORP., 5555 Northeast Moore Ct., Hillsboro, Oregon 97124, U.S.A.
Tel. (503) 268-8000; 1-800-LATTICE; FAX (503) 268-8556; http://www.latticesemi.com
May 2001
1
16v8_08
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