G8931-04

更新时间： 2024-10-02 03:38:59

品牌	Logo	应用领域
HAMAMATSU		光电二极管
页数	文件大小	规格书
2页	87K
描述
InGaAs APD

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中文翻译

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数据手册

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G8931-04 数据手册

P H O T O D I O D E

InGaAs APD

G8931-04

Time response characteristics compatible with SONET and G/GE-PON

G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET

(Synchronous Optical Network), G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).

Features

Applications

High-speed response: 2.5 Gbps

Low dark current

Optical fiber communications

High-speed data links

Low capacitance

Active area: φ0.04 mm

High sensitivity

ꢀ General ratings

Parameter

Active area

Symbol

Value

φ0.04

Unit

ꢀ Absolute maximum ratings

Parameter

Forward current

Symbol

Value

500

Unit

µA

Reverse current

Operating temperature

Storage temperature

Topr

Tstg

-40 to +85

-55 to +125

°C

ꢀ Electrical and optical characteristics (Ta=25 °C)

Parameter

Spectral response range

Peak sensitivity wavelength

Photo sensitivity

Symbol

Condition

Min.

0.8

Typ.

0.9 to 1.7

Max.

Unit

µm

A/W

V/°C

λp

1.55

0.9

0.11

λ=1.55 µm, M=1

Breakdown voltage

Temperature coefficient of V

Dark current

I =100 µA

0.16

-40 to +85 °C

V =V

× 0.9

Cut-off frequency

M=10

GHz

V =V

Terminal capacitance

0.35

0.45

f=1 MHz

ꢀꢀSpectral response

ꢀꢀ Dark current vs. reverse voltage

(Typ. Ta=25 ˚C, M=1)

(Typ. Ta=25 ˚C)

1.0

1 mA

100 µA

10 µA

1 µA

PHOTOCURRENT

0.8

0.6

0.4

0.2

100 nA

10 nA

1 nA

DARK CURRENT

100 pA

10 pA

1 pA

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

WAVELENGTH (µm)

REVERSE VOLTAGE (V)

KAPDB0120EA

KAPDB0123EA

中文翻译

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