Datasheet > G8921-01_04

G8921-01_04

更新时间： 2024-10-02 03:38:59

品牌	Logo	应用领域
HAMAMATSU		光电二极管光电二极管
页数	文件大小	规格书
2页	124K
描述
GaAs PIN photodiode array

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中文翻译

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数据手册

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G8921-01_04 数据手册

P H O T O D I O D E

GaAs PIN photodiode array

G8921-01

Photodiode array for data communication

Features

Applications

Active area: φ0.06 mm

Optical fiber communications

High-speed data link

Element pitch: 250 µm

4-element array

High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]

at low bias voltage (VR=2 V)

Low dark current, low capacitance

Up to 16 elements available as option

ꢀ General ratings

Parameter

Symbol

Value

f0.06

250

Unit

µm

Active area

Element pitch

Number of elements

ꢀ Absolute maximum ratings

Parameter

Symbol

V^RMax^.

I^RMax.

Topr

Remark

Value

Unit

Reverse voltage

Reverse current

0.5

°C

Operating temperature

Storage temperature

* In N²environment or in vacuum

-40 to +85

-55 to +125

Tstg

°C

ꢀ Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element)

Parameter

Spectral response range

Peak sensitivity wavelength

Photo sensitivity

Symbol

Condition

Min.

Typ.

470 to 870

850

Max.

Unit

A/W

l=850 nm

0.45

0.5

Dark current

I^D

V^R=5 V

0.5

Terminal capacitance

V^R=2 V, f=1 MHz

l=850 nm, V^R=2 V,

R^L=50 W, -3 dB

0.35

Cut-off frequency

GHz

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