Datasheet > G8550S

G8550S

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
3页	174K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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G8550S 数据手册

ISSUED DATE :2004/04/23

REVISED DATE :2004/11/29B

GTM

CORPORATION

G8550S

P N P E P I T A X I A L P L A N A R T A N S I S T O R

Description

The G8550S is designed for general purpose amplifier applications.

Features

* High DC Current gain: 100-500 at IC= 150mA

*Complementary to G8050S

Package Dimensions

S 1

TO-92

S E A T IN G

P L A N E

Millimeter

Min. Max.

Millimeter

REF.

Min.

4.44

3.30

12.70

Max.

4.7

3.81

4.45

1.02

0.36

4.7

0.51

0.76

0.51

1.150 1.390

2.42 2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55 ~ +150

-25

Unit

Tstg

CBO

VCEO

VEBO

-20

-5

-700

Total Power Dissipation

625

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-25

=-10uA, I

BVCEO

BVEBO

ICEX

-20

=-1mA, IB

-5

=-10uA, , I

CE=-20V, I

=-0.5A, I

C=0

-1

-0.5

-1

500

*VCE(sat)

*VBE(on)

*hFE1

*hFE2

=-50mA

100

CE=-1V, I

=-150mA

=-500mA

100

150

MHz

CE=-10V, I

CB=-10V, f=1MHz

* Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%

C=-20mA, f=100MHz

Cob

Classification Of hFE

Rank

250-500

Range

100-180

160-300

G8550S

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