Datasheet > G8423

G8423

更新时间： 2022-11-26 22:00:21

品牌	Logo	应用领域
HAMAMATSU		光电二极管光电二极管
页数	文件大小	规格书
4页	262K
描述
InGaAs PIN photodiode

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G8423 数据手册

P H O T O D I O D E

InGaAs PIN photodiode

G8423/G8373/G5853 series

Long wavelength type (up to 2.6 µm)

Features

Applications

Long cut-off wavelength: 2.6 µm

Gas analysis

3-pin TO-18 package: low price

Thermoelectrically cooled TO-8 package: low dark current

Active area: φ0.3 to φ3 mm

Spectrophotometer

NIR (near infrared) photometry

Specifications / Absolute maximum ratings

ꢀ

Absolute maximum ratings

Thermistor TE-cooler Reverse Operating

Active

area

Storage

allowable voltage temperature temperature

Dim ensional

outline

Type No.

Package

Cooling

power

dissipation

current

Topr

Tstg

(mm)

φ0.3

φ0.5

φ1

φ3

φ0.3

φ1

φ3

φ0.3

φ1

(mW)

(A)

(V)

(°C)

G8423-03

G8423-05

G8373-01

G8373-03

G5853-103

G5853-11

G5853-13

G5853-203

G5853-21

G5853-23

TO-18

TO-5

TO-8

ꢀ

Non-cooled

-40 to +85 -55 to +125

-40 to +70 -55 to +85

One-stage

TE-cooled

1.5

1.0

0.2

Two-stage

TE-cooled

TO-8

ꢀ

φ3

Electrical and optical characteristics (Typ. unless otherwise noted)

ꢀ

M easurem ent

condition

Cut-off

frequency

VR=1 V

RL=50 Ω

-3 dB

Terminal

capacitance

VR=1 V

f=1 MHz

Spectral

response sensitivity sensitivity

range

Peak

Photo

Shunt

resistance

Dark current

VR=1 V

NEP

λ=λp

w avelength

λ=λp

Rsh

=10 m V

Element

tem perature

Type No.

λp

Typ.

(µA)

Max.

(µA)

(cm ·Hz^1/2/W ) (W/Hz^1/2)

(MHz)

(pF)

200

1800

200

1800

(°C)

(µm)

2.3

(A/W)

1.1

(kΩ)

0.3

300

G8423-03

G8423-05

G8373-01

G8373-03

G5853-103

G5853-11

G5853-13

G5853-203

G5853-21

G5853-23

150

0.2

1.5

0.1

0.8

7.5

1500

7.5

150

1.5

7 × 10^-13

1 × 10^-12

1.2 to 2.6

5 × 10¹⁰

2 × 10^-12

8 × 10^-12

3 × 10^-13

-10

-20

1.2 to 2.57

1.2 to 2.55

1 × 10¹¹7 × 10^-13

2 × 10^-12

600

2 × 10^-13

200

1800

2 × 10¹¹5 × 10^-13

1.8 × 10^-12

12 3 4

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