Datasheet > G8376_06

G8376_06

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
HAMAMATSU		光电二极管光电二极管
页数	文件大小	规格书
2页	182K
描述
InGaAs PIN photodiode

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G8376_06 数据手册

P H O T O D I O D E

InGaAs PIN photodiode

G8376 series

Standard type

InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are

provided to meet wide applications.

Features

Applications

Low noise, low dark current

Low terminal capacitance

3-pin TO-18 package

NIR (near infrared) photometry

Optical communication

■ Specifications / Absolute maximum ratings

Absolute maximum ratings

Reverse

voltage

Operating

temperature

Topr

Storage

temperature

Tstg

Active area

Type No.

Window material

Package

TO-18

(mm)

φ0.04

φ0.08

φ0.3

(V)

(°C)

G8376-01

Borosilicate glass

with anti-reflective

coating (optimized

for 1.55 µ m peak)

G8376-02

G8376-03

G8376-05

-40 to +85

-55 to +125

φ0.5

■ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Terminal

capacitance

VR=5 V

f=1 MHz

Cut-off

frequency

VR=2 V

RL=50 Ω

-3 dB

Photo

sensitivity

Peak

Dark

current

Shunt

resistance

Rsh

Spectral

response

range

sensitivity

NEP

λ=λp

wavelength

λp

Type No.

VR=5 V

VR=10 mV

1.3 µm

λ=λp

Min. Typ. Min. Typ.

(A/W) (A/W) (A/W) (A/W)

Typ. Max.

(nA) (nA)

0.06 0.3

0.08 0.4

0.3 1.5

0.5 2.5

(cm· Hz^1/2/W)

(µm)

(W/Hz^1/2)

2 × 10^-15

4 × 10^-15

8 × 10^-15

(MHz)

(pF)

0.5

(MΩ)

10000

8000

1000

300

G8376-01

3000

2000

400 *

200 *

G8376-02

G8376-03

G8376-05

* VR=5 V

0.9 to 1.7 1.55 0.8 0.9 0.850.95

5 × 10¹²

G8376 series may be damaged by Electro Static Discharge, etc. Be carefull when using G8376 series.

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