P H O T O D I O D E
InGaAs PIN photodiode
G8370-81/-82/-83/-85
Low PDL (Polarization Dependence Loss)
InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low
noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
Features
Applications
Low PDL (Polarization Dependence Loss)
Low noise, low dark current
Large active area
Laser monitor
Optical power meter
Laser diode life test
Various active area sizes available
ꢀ Specifications / Absolute maximum ratings
Absolute maximum ratings
Dimensional
outline/
Reverse
voltage
VR Max.
(V)
Operating
temperature
Topr
Storage
temperature
Tstg
Active area
Type No.
Package
Window
material *1
(mm)
φ1
φ2
φ3
φ5
(°C)
(°C)
G8370-81
ꢀ/K
ꢀ/K
ꢀ/K
TO-18
TO-5
TO-8
5
2
1
G8370-82
G8370-83
G8370-85
-40 to +85
-55 to +125
ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Cut-off
frequency
fc
Terminal
capacitance
Ct
V =1 V
R
f=1 MHz
Dark
current
ID
Peak
sensitivity
wavelength
λp
Photo
sensitivity
S
Shunt
resistance
Rsh
Spectral
response
range
PDL
λ=λp
D
λ=λp
NEP
λ=λp
V
R
=1 V
Type No.
VR=1 V
R
L
=50
R
V =10 mV
Ω
-3 dB
1.3 µm
λ=λp
Min. Typ. Min. Typ.
(A/W) (A/W) (A/W) (A/W)
Typ. Max.
(nA) (nA) (MHz)
Typ. Max.
(mdB) (mdB) (cm· Hz1/2/W)
(µm)
(µm)
(pF)
90
550
1000
3500
(MΩ)
100
25
10
3
(W/Hz1/2
)
G8370-81
1
5
5
25
35
4
2
2 × 10-14
4 × 10-14
6 × 10-14
1 × 10-13
G8370-82
G8370-83
G8370-85
0.9 to 1.7 1.55 0.8 0.9 0.85 1.1
5
10 5 × 1012
15 75
125 *2
0.6
25 *2
*1: Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55 µm peak)
*2: VR=0.1 V
1