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G5616R51U PDF预览

G5616R51U

更新时间: 2024-11-15 01:11:51
品牌 Logo 应用领域
致新 - GMT 双倍数据速率
页数 文件大小 规格书
4页 108K
描述
Complete DDR, DDRII and DDRIII Memory Solution Synchronous Buck PWM Controller, 3A LDO, Buffered Reference

G5616R51U 数据手册

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G5616  
Global Mixed-mode Technology  
Complete DDR, DDRII and DDRIII Memory Solution  
Synchronous Buck PWM Controller, 3A LDO,  
Buffered Reference  
Features  
Synchronous Buck Controller (VDDQ)  
General Description  
The G5616 is intended for DDR/SSTL-2, D-  
DRII/SSTL-18 and DDRIII memory systems. It inte-  
grates a synchronous buck PWM controller with a 3-A  
sink-source linear regulator and buffered reference.  
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Ultra-High Efficiency  
No Current-Sense Resistor (Lossless ILIMIT)  
Quasi-PWM with 100ns Load-Step Response  
1.8V(DDRII) /1.5V(DDRIII) Fixed or Adjustable  
to 2.5V(DDR) or 0.75V to 3.6V Adjustable Out-  
put Range  
The PWM controller uses constant on-time control  
scheme to handle wide input/output voltage ratios with  
ease and provides 100ns instant-onresponse to  
load transients while maintaining a relatively constant  
switching frequency. The G5616 achieves high effi-  
ciency at a reduced cost by eliminating the cur-  
rent-sense resistor found in traditional current-mode  
PWMs. Efficiency is further enhanced by an ability to  
drive very large synchronous rectifier MOSFETs. Sin-  
gle-stage buck conversion allows these devices to  
directly step down high-voltage batteries for the high-  
est possible efficiency.  
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2V to 24V Battery Input Range  
400kHz Switching Frequency  
OVP & UVP of VDDQ Output  
Drives Large Synchronous-Rectifier FETs  
Power-Good Indicator  
3-A LDO (VTT), Buffered Reference (VTTREF)  
„
Support DDR (1.25 VTT) , DDR II (0.9 VTT) and  
DDRIII(0.75 VTT) Requirements  
VLDOIN Voltage Range: 1.2V to 3.6V  
Requires Only 20µF Ceramic VTT Output Ca-  
pacitance  
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The 3A sink/source tracking termination regulator is  
specifically designed for low-cost/ low-external com-  
ponent count systems. The regulator contains a high  
speed operational amplifier that provides fast load  
transient response with only 20µF (2x10µF) of ceramic  
output capacitance. The G5616 supports remote  
sensing functions and all features required to power  
the DDR /DDRII /DDRIII VTT bus termination accord-  
ing to the JEDEC specification. In addition, the G5616  
includes integrated sleep-state controls placing VTT in  
High-Z in S3 (suspend to RAM) and soft-off for VTT  
and VTTREF in S5 (Shutdown).  
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Supports High-Z in S3 and Soft-Off in S5  
Integrated Divider Tracks 1/2 VDDQSNS for  
Both VTT and VTTREF  
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Remote Sensing (VTTSNS)  
±20mV Accuracy for VTT and VTTREF  
10mA Buffered Reference (VTTREF)  
Built-In Soft-Start to Reduce the VLDOIN Surg-  
ing Current  
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Over Current Protection of VTT Output  
Thermal Shutdown Protection  
Applications  
The G5616 provides OVP, UVP, over current and  
thermal shutdown protection functions and is available  
in a 20-pin 3X3 TQFN package and 24-pin 4X4 TQFN  
includes over voltage protection.  
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Notebook Computers  
CPU Core Supply  
Chipset/RAM Supply as Low as 0.75V  
1.8V and 2.5V I/O Supply  
Ordering Information  
ORDER  
NUMBER  
G5616RZ1U  
G5616R51U  
TEMP.  
RANGE  
PACKAGE  
(Green)  
MARKING  
5616  
5616  
-40°C to +85°C  
-40°C to +85°C  
TQFN3X3-20  
TQFN4X4-24  
Note: RZ: TQFN3X3-20  
1: Bonding Code  
U : Tape & Reel  
R5: TQFN4X4-24  
TEL: 886-3-5788833  
http://www.gmt.com.tw  
Ver: 1.5  
Oct 26, 2012  
1

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