生命周期: | Obsolete | 零件包装代码: | DO-35 |
包装说明: | O-LALF-W2 | 针数: | 2 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.10.00.80 | 风险等级: | 5.7 |
其他特性: | LOW INDUCTANCE | 外壳连接: | ISOLATED |
配置: | SINGLE | 二极管电容容差: | 2% |
最小二极管电容比: | 2 | 标称二极管电容: | 22 pF |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | S BAND | JEDEC-95代码: | DO-35 |
JESD-30 代码: | O-LALF-W2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 175 °C |
封装主体材料: | GLASS | 封装形状: | ROUND |
封装形式: | LONG FORM | 最大功率耗散: | 0.4 W |
认证状态: | Not Qualified | 最小质量因数: | 500 |
表面贴装: | NO | 端子形式: | WIRE |
端子位置: | AXIAL | 变容二极管分类: | ABRUPT |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G522ACHIP | APITECH |
获取价格 |
Variable Capacitance Diode, Very High Frequency to S Band, 22pF C(T), 25V, Silicon, Abrupt | |
G522B | APITECH |
获取价格 |
Variable Capacitance Diode, S Band, 22pF C(T), 25V, Silicon, Abrupt, DO-35, | |
G522BCHIP | APITECH |
获取价格 |
Variable Capacitance Diode, Very High Frequency to S Band, 22pF C(T), 25V, Silicon, Abrupt | |
G522CCHIP | APITECH |
获取价格 |
Variable Capacitance Diode, Very High Frequency to S Band, 22pF C(T), 25V, Silicon, Abrupt | |
G523 | SAFT |
获取价格 |
3.0 V Primary lithium-sulfur dioxide High drain capability C-size spiral cell | |
G524 | GMT |
获取价格 |
UL, CB, SS, Fast SCP, VOUT Reverse-Voltage Protection, A/B/C/D ILimit = 2.1A/2.5A/2.0A/1. | |
G-524.5KOHM1% | VISHAY |
获取价格 |
RESISTOR, WIRE WOUND, 4 W, 1 %, 20 ppm, 24500 ohm, THROUGH HOLE MOUNT, AXIAL LEADED | |
G-524.5KOHM5% | VISHAY |
获取价格 |
RESISTOR, WIRE WOUND, 4 W, 5 %, 20 ppm, 24500 ohm, THROUGH HOLE MOUNT, AXIAL LEADED | |
G5240 | GMT |
获取价格 |
High-Side Power Distribution Switch | |
G5241 | GMT |
获取价格 |
High-Side Power Distribution Switch |