型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G522AB | APITECH |
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Variable Capacitance Diode, S Band, 22pF C(T), Silicon, Abrupt, DO-35, HERMETIC SEALED, DO | |
G522AC | APITECH |
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Variable Capacitance Diode, S Band, 22pF C(T), Silicon, Abrupt, DO-35, HERMETIC SEALED, DO | |
G522ACHIP | APITECH |
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Variable Capacitance Diode, Very High Frequency to S Band, 22pF C(T), 25V, Silicon, Abrupt | |
G522B | APITECH |
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Variable Capacitance Diode, S Band, 22pF C(T), 25V, Silicon, Abrupt, DO-35, | |
G522BCHIP | APITECH |
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Variable Capacitance Diode, Very High Frequency to S Band, 22pF C(T), 25V, Silicon, Abrupt | |
G522CCHIP | APITECH |
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Variable Capacitance Diode, Very High Frequency to S Band, 22pF C(T), 25V, Silicon, Abrupt | |
G523 | SAFT |
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3.0 V Primary lithium-sulfur dioxide High drain capability C-size spiral cell | |
G524 | GMT |
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UL, CB, SS, Fast SCP, VOUT Reverse-Voltage Protection, A/B/C/D ILimit = 2.1A/2.5A/2.0A/1. | |
G-524.5KOHM1% | VISHAY |
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RESISTOR, WIRE WOUND, 4 W, 1 %, 20 ppm, 24500 ohm, THROUGH HOLE MOUNT, AXIAL LEADED | |
G-524.5KOHM5% | VISHAY |
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RESISTOR, WIRE WOUND, 4 W, 5 %, 20 ppm, 24500 ohm, THROUGH HOLE MOUNT, AXIAL LEADED |