是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | R-XXMA-X |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.51 | Is Samacsys: | N |
应用: | GENERAL PURPOSE | 配置: | COMPLEX |
二极管元件材料: | SILICON | 二极管类型: | RECTIFIER DIODE |
JESD-30 代码: | R-XXMA-X | JESD-609代码: | e0 |
相数: | 1 | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN LEAD |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
G43120H1EC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G43120H1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
G43120H1FB1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G43120H1FC1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G43120H1FN1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G43120H1TN1S | MICROSEMI |
获取价格 |
Rectifier Diode, 1 Phase, Silicon, | |
G43120M1EB1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
G43120M1EC1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, | |
G43120M1EN1S | MICROSEMI |
获取价格 |
Silicon Power Rectifier Assemblies Plate Heatsink | |
G43120M1FB1S | MICROSEMI |
获取价格 |
Bridge Rectifier Diode, 1 Phase, Silicon, |