Datasheet > G4176-02

G4176-02

更新时间： 2024-01-29 11:57:15

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Optoelectronic

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G4176-02 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.59	Is Samacsys：	N
Base Number Matches：	1

G4176-02 数据手册

ULTRAFAST GaAs

MSM PHOTODETECTORS

G4176 SERIES

Ultrafast Response (tr, tf = 30ps ^G4176), Low Dark Current

■FEATURES

●Ultrafast response

●Low dark current

●Large photosensitive area�

�

■APPLICATIONS

●Optical high speed waveform measurement

●Optical communications

G4176

G4176-01

G4176-02

and each polarity of the output pulse can be obtained in

response to the applied bias.

The G4176 is a GaAs MSM (Metal-Semiconductor-Metal)

photodetector that achieves ultrafast response times of 30 ps

(rise and fall) and a low dark current of 100 pA (at 25 °C).

The photosensitive area of the MSM photodetector is

composed of symmetrical and interdigital Schottky contacts,

and is relatively larger than other ultra fast photodetectors, thus

facilitating coupling with an optical system. So, the MSM

photodetector is ideal as an ultrafast detector for digital signal

transmission in optical communications.

The G4176 series consists of various package styles: a coaxial

metal package* facilitating connecting with an SMA connector

(G4176: The bias-tee is necessary), a general purpose TO-18

package (G4176-01), and a small ceramic package (G4176-

02). Fiber-pigtailed or optical connectorised types are also

available for G4176 and G4176-01.

*Japanese Patent No.2070802

Additionally, both polarities of the bias voltage are available,

■ELECTRICAL AND OPTICAL CHARACTERISTICS（Ta=25℃, VB=7V）

■ABSOLUTE MAXIMUM RATINGS（Ta=25℃）

Value

Parameter

Value

Symbol

Unit

Condition

�

Unit

Parameter

Symbol� Condition

�

Min.

0.2

Typ.

0.3

Max.

Maximum Bias Voltage

Maximum Light Input

Pulsed Lightꢀ

VBmax

Radiant sensitivity

Dark Current

NEP**

λ=850nm

A/W

Pulse width≦1ns�

Pulse width＞1ns

100

300

Lmax

℃�

CW to Pulsed Light

3×10^-15

4×10^-15

G4176

Operating Temperature

Storage Temperature

-40 to +85

-40 to +100

Topr

Tstg

W/Hz^1/2

λ=850nm

G4176-01

G4176-02

Terminal Capacitance

G4176

■General Characteristics (Ta=25℃)

0.3

0.5

0.8

0.4

0.6

1.0

Parameter

Value

450 to 870

850

Unit

Symbol�

Condition�

G4176-01

G4176-02

Rise Time

G4176

�

Spectral Response Range

Peak Response Wavelength

Effective Sensitive Area

Chip Size

λ�

VB=7V

λp�

VB=7V

mm²

0.2×0.2

1×1

10 to 90%

G4176-01

G4176-02

Fall Time

Package

TO-5

ꢀG4176

(Unified with SMA connector)

ꢀG4176-01

TO-18

G4176

Ceramic

ꢀG4176-02

G4176-01

G4176-02

**Noise Equivalent Power

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

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