G4176-01

更新时间： 2024-01-31 00:07:50

品牌	Logo	应用领域
HAMAMATSU		光纤光电
页数	文件大小	规格书
4页	119K
描述
ULTRAFAST MSM PHOTODETECTORS

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技术参数
数据手册

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G4176-01 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TO-18	Reach Compliance Code：	unknown
风险等级：	5.82	主体高度：	3.6 mm
主体长度或直径：	4.7 mm	最大暗电源：	1e-7 nA
光纤设备类型：	PHOTODIODE DETECTOR	安装特点：	THROUGH HOLE MOUNT
最高工作温度：	85 °C	最低工作温度：	-40 °C
标称工作波长：	850 nm	封装形式：	TO-18
光谱宽度：	660 nm	标称供电电压：	10 V
表面贴装：	NO	传输类型：	DIGITAL
Base Number Matches：	1

G4176-01 数据手册

ULTRAFAST MSM PHOTODETECTORS

G4176 SERIES (GaAs)

G7096 SERIES (InGaAs)

PRELIMINARY DATA

Ultrafast response of several tens picosecond

FEATURES

Ultrafast response

G4176 : t , t = 30 ps (Typ.)

G7096 : t = 40 ps (Typ.)

Low dark current

G4176 : 100 pA (Ta=25 °C)

Large photosensitive area

200 µm

G4176

G7096

G4176-01

G7096-01

APPLICATIONS

Optical high-speed waveform measurements

Optical communications

DESCRIPTION

HAMAMATSU realized MSM (Metal-Semiconductor-Metal) Photodetectors having ultrafast responses.

The GaAs MSM Photodetector G4176 features 30ps response time for both rise & fall while keeping a low dark

current (100pA at Ta=25 °C). The rise time of the InGaAs MSM Photodetector G7096 is 40ps.

Symmetrical and interdigital Schottky contacts are fabricated at the sensitive area, whose size can be larger than

other kinds of fast response photodetectors. This makes easier to set up with optics. Therefore, MSM

Photodetectors are suited for measurements of optical high-speed waveform and optical communications.

There is no electrical polarity in MSM Photodetectors, that is, both polarities of a bias voltage are available, and

the polarity of an output signal depends on its connection.

Two kinds of packages are prepared for each MSM Photodetector. The package of G4176 & G7096 is a coaxial

metal type (patent : Japan 2070802), which is easy to connect with an electrical SMA-connector. That of G4176-

01 & G7096-01 is a TO-18, which is very common.

An optical fiber or connector input types are available as a custom option. Contact your local representative for

more information.

Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.

Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. '2003 Hamamatsu Photonics K.K.

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