Datasheet > G411SD

G411SD

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		肖特基二极管
页数	文件大小	规格书
2页	205K
描述
SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.5A

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G411SD 数据手册

GTM CORPORATION

Page : 1/2

G411SD

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O LT AG E 4 0 V, C U R R E N T 0 . 5 A

Description

The G411SD is designed for low power rectification

Package Dimensions

TPU.34)QBDLBHF*

Millimeter

Min.

1.90 REF.

REF.

Min.

Max.

3.10

2.80

1.60

0.50

0.10

0.55

Max.

2.70

2.40

1.40

0.35

1.00

1.30

0.20

1.15

10̓

0.10

0.40

0.85

0̓

0.45

Absolute Maximum Ratings at Ta = 25к

Parameter

Symbol

Ratings

Unit

Junction Temperature

+125

Storage Temperature

Tstg

V_RRM

V_RMS

V_DC

I_FSM

C_J

-40 ~ +125

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Peak Forward Surge Current at 8.3mSec single half sine-wave

Typical Junction Capacitance between Terminal

Maximum Average Forward Rectified Current

Total Power Dissipation

0.5

225

Characteristics at Ta = 25к

Characteristics

Maximum Instantaneous Forward Voltage

Maximum Average Reverse Current

Symbol

Typ.

0.3

0.5

Unit

Test Condition

IF = 10mA

V_F(1)

V_F(2)

IF =500mA

VR = 10V

GTM Product Specification

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