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G2MF PDF预览

G2MF

更新时间: 2024-11-24 15:19:07
品牌 Logo 应用领域
扬杰 - YANGJIE /
页数 文件大小 规格书
4页 245K
描述
SMAF

G2MF 数据手册

 浏览型号G2MF的Datasheet PDF文件第2页浏览型号G2MF的Datasheet PDF文件第3页浏览型号G2MF的Datasheet PDF文件第4页 
RoHS  
G2AF THRU G2MF  
COMPLIANT  
Surface Mount General Purpose Rectifier  
Features  
Low profile package  
Ideal for automated placement  
Glass passivated chip junction  
High forward surge capability  
Meets MSL level 1, per J-STD-020, LF maximum peak  
of 260 °C  
Typical Applications  
For use in general purpose rectification of power supplies,  
inverters, converters, and freewheeling diodes for  
consumer, and telecommunication.  
Mechanical Data  
ackage: SMAF  
P
Molding compound meets UL 94 V-0 flammability  
rating, RoHS-compliant, halogen-free  
Terminals: Tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
Cathode line denotes the cathode end  
Polarity:  
(T =25Unless otherwise specified  
Maximum Ratings  
a
G2AF  
G2AF  
50  
G2BF  
G2DF  
G2DF  
200  
G2GF  
G2GF  
400  
G2JF  
G2JF  
600  
G2KF  
G2KF  
800  
G2MF  
G2MF  
1000  
700  
PARAMETER  
SYMBOL UNIT  
G2BF  
100  
70  
Device marking code  
V
V
V
V
V
A
Maximum Repetitive Peak Reverse Voltage  
Maximum RMS Voltage  
RRM  
RMS  
35  
140  
280  
420  
560  
V
50  
100  
200  
400  
600  
800  
1000  
Maximum DC blocking Voltage  
DC  
Average rectified output current  
I
2.0  
O
@60Hz sine wave, resistance load, TL (Fig.1)  
Forward Surge Current (Non-repetitive)  
@60Hz Half-sine wave,1 cycle, Tj=25  
Forward Surge Current (Non-repetitive)  
50  
IFSM  
A
100  
@1ms, square wave, 1 cycle, Tj=25℃  
Current squared time  
@1mst8.3ms Tj=25℃  
A2s  
I2t  
10.735  
T
stg  
-55 ~ +150  
-55 ~ +150  
Storage temperature  
T
j
Junction temperature  
T =25Unless otherwise specified)  
Electrical Characteristics  
a
G2AF  
G2BF  
G2DF  
G2GF  
G2JF  
G2KF  
G2MF  
PARAMETER  
SYMBOL  
UNIT  
TEST CONDITIONS  
Maximum instantaneous  
forward voltage  
V
I
=2.0A  
V
1.1  
F
FM  
T =25℃  
5.0  
j
Maximum DC reverse current at  
rated DC blocking voltage  
I
μA  
R
100  
T =125℃  
j
Measured at 1MHz and  
Applied Reverse Voltage  
of 4.0 V.D.C  
Typical junction capacitance  
Cj  
pF  
12  
1 / 4  
S-S038  
Rev. 2.5, 23-Nov-21  
Yangzhou Yangjie Electronic Technology Co., Ltd.  
www.21yangjie.com  

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