Datasheet > G1747

G1747

更新时间： 2022-11-26 21:33:28

品牌	Logo	应用领域
HAMAMATSU		二极管
页数	文件大小	规格书
4页	135K
描述
GaAsP photodiode

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G1747 数据手册

P H O T O D I O D E

GaAsP photodiode

G1746 G1747

Schottky type with extended red sensitivity

Features

Applications

Low dark current

Extended red sensitivity

High UV sensitivity

Analytical instrument

Color identification

UV detection

ꢀ General ratings / Absolute maximum ratings

Absolute maximum ratings

Operating

Effective

Reverse

active

Dimensional

Active area

size

Storage

outline/

Window

Material *

Type No.

Package

voltage

area

VR Max.

temperature

Topr

temperature

Tstg

(mm)

(mm²)

5.2

(V)

(°C)

G1746

G1747

ꢀ/Q

TO-5

TO-8

2.3 × 2.3

4.6 × 4.6

-10 to +60

-20 to +70

ꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Peak

Spectral sensi-

response

tivity

range wave-

Photo sensitivity

(A/W)

Temp.

coefficient

TCID

Terminal

Dark

current

Rise time

VR=0 V

RL=1 kΩ

Shunt

resistance

Rsh

Short circuit

current

Isc

capacitance

VR=0 V

f=10 kHz

NEP

Type No.

length

λp

100 xl

Max.

VR=10 mV

Hg GaP He-Ne

line LED laser

254 nm 560 nm 633 nm

λp

Min. Typ.

Min. Typ. VR=10 mV V^R=1 V

(µA) (µA) (pA) (pA)

(nm) (nm)

(µs)

(pF)

(W/Hz^1/2)

6.5 × 10^-15

1.2 × 10^-14

6000 0.5 2.5

(

)

(GΩ) (GΩ)

times/°C

1600

G1746

G1747

* Window material Q: quartz glass

0.5 0.65 10

1.8 2.4 20

100

200

190 to 760 710 0.22 0.02 0.18 0.2

1.07

12 3 4

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