Datasheet > G11097-0707S

G11097-0707S

更新时间： 2024-02-11 03:37:43

品牌	Logo	应用领域
HAMAMATSU		时钟传感器换能器
页数	文件大小	规格书
9页	255K
描述
CMOS Sensor, 128 Horiz pixels, 128 Vert pixels, Rectangular, Through Hole Mount, HERMETICALLY SEALED, METAL, 28 PIN

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G11097-0707S 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.73	阵列类型：	FRAME
主体宽度：	25.4 mm	主体高度：	6.9 mm
主体长度或直径：	38.1 mm	动态范围：	70.37 dB
水平像素：	128	外壳：	METAL
主时钟：	8 MHz	安装特点：	THROUGH HOLE MOUNT
最大工作电流：	100 mA	最高工作温度：	60 °C
最低工作温度：	-10 °C	输出类型：	DIGITAL VOLTAGE
封装形状/形式：	RECTANGULAR	像素大小：	50X50 µm
传感器/换能器类型：	IMAGE SENSOR,CMOS	最大供电电压：	5.1 V
最小供电电压：	4.9 V	表面贴装：	NO
端接类型：	SOLDER	垂直像素：	128
Base Number Matches：	1

G11097-0707S 数据手册

InGaAs area image sensor

G11097-0707S

Image sensor with 128 × 128 pixels devel-

oped for two-dimensional infrared imaging

The G11097-0707S has a hybrid structure consisting of a CMOS readout circuit (ROIC: readout integrated circuit) and back-

illuminated InGaAs photodiodes. Each pixel is made up of an InGaAs photodiode and a ROIC electrically connected by an

indium bump. A timing generator in the ROIC provides an analog video output and AD-TRIG output which are easily ob-

tained by just supplying a master clock (MCLK) and master start pulse (MSP) from external digital inputs.

The G11097-0707S has 128×128 pixels arrayed at a 50 μm pitch and their signals are read out from a single video line.

Light incident on the InGaAs photodiodes is converted into electrical signals which are then input to the ROIC through in-

dium bumps. Electrical signals in the ROIC are converted into voltage signals by charge ampliﬁers and then sequentially

output from the video line by the shift register. The G11097-0707S is hermetically sealed in a metal package together with

a one-stage thermoelectric cooler to deliver low-cost yet highly stable operation.

Features

Applications

Spectral response range: 0.95 to 1.7 μm

Thermal imaging monitor

Laser beam proﬁler

Excellent linearity by offset compensation

High sensitivity: 1600 nV/e

Near infrared image detection

Foreign object detection

Simultaneous charge integration for all pixels

(global shutter mode)

Simple operation (built-in timing generator)

One-stage TE-cooled

Block diagram

A sequence of operation of the readout circuit is described below.

In the readout circuit, the charge ampliﬁer output voltage is sampled

and held simultaneously at all pixels during the integration time deter-

mined by the low period of the master start pulse (MSP) which is as a

frame scan signal. Then the pixels are scanned and their video signals

are output.

Pixel scanning starts from the starting point at the upper left in the

right ﬁgure. The vertical shift register scans from top to bottom in the

right ﬁgure while sequentially selecting each row.

Start

128 × 128 pixels

For each pixel on the selected row, the following operations are per-

formed:

Transfers the sampled and held optical signal information to the sig-

nal processing circuit as a signal voltage.

End

Resets the ampliﬁer in each pixel after having transferred the signal

voltage and transfers the reset voltage to the signal processing circuit.

The signal processing circuit samples and holds the signal voltage

and reset voltage .

The horizontal shift register scans from left to right in the right ﬁg-

ure, and the voltage difference between and is calculated in the

offset compensation circuit. This eliminates the ampliﬁer offset volt-

age in each pixel. The voltage difference between and is output

as the output signal in the form of serial data.

Offset

compensation

circuit

Signal processing circuit

Shift register

VIDEO

KMIRC0059EA

The vertical shift register then selects the next row and repeats the

operations from

to . After the vertical shift register advances to the

128th row, the MSP, which is a frame scan signal, goes low. After that,

when the MSP goes high and then low, the reset switches for all pixels

are simultaneously released and the next frame integration begins.

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与G11097-0707S相关器件

型号	品牌	获取价格	描述	数据表
G110B	ZOWIE	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
G110B121GM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -20/+100ppm/Cel TC, 0.00012uF
G110B121JM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -20/+100ppm/Cel TC, 0.00012uF
G110B242JM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -20/+100ppm/Cel TC, 0.0024uF
G110B472JM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -20/+100ppm/Cel TC, 0.0047uF
G110C162JM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -/+200ppm/Cel TC, 0.0016uF
G110C561JM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -/+200ppm/Cel TC, 0.00056uF
G110D	ZOWIE	获取价格	GLASS PASSIVATED JUNCTION RECTIFIER
G110D121JM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -/+100ppm/Cel TC, 0.00012uF
G110D152GM	CDE	获取价格	Mica Capacitor, Mica, 1000V, -/+100ppm/Cel TC, 0.0015uF

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