Datasheet > FZTA92

FZTA92

更新时间： 2024-09-27 12:04:55

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	168K
描述
High breakdown voltage

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FZTA92 数据手册

Product specification

FZTA92

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

High breakdown voltage

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^B

Rating

-300

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-300

-5

Base Current

-100

Continuous Collector Current

Power Dissipation at Tamb=25°C

Operating and Storage Temperature Range

I^C

-500

P^tot

T^j:T^stg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

I^C=-100ìA, I^E=0

Min

-300

-5

Typ

Max

Unit

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

V^(BR)CBO

V^(BR)CEO

V^(BR)EBO

I^CBO

I^C=-1mA, I^B=0*

I^E=-100ìA, I^C=0

V^CB=-200V, I^E=0

VEB=-3V, IC=0

-0.25

-0.1

-0.5

-0.9

ìA

Emitter Cut-Off Current

I^EBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

VCE(sat)

V^BE(sat)

IC=-20mA, IB=-2mA

I^C=-20mA, I^B=-2mA

I^C=-1mA, V^CE=-10V*

I^C=-10mA, V^CE=-10V*

I^C=-30mA, V^CE=-10V*

Static Forward Current Transfer Ratio

h^FE

Transition Frequency

Output Capacitance

f^T

I^C=-10mA, V^CE=-20V,f=20MHz

V^CB=-20V, f=1MHz

MHz

C^obo

* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle

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