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FZTA42TC PDF预览

FZTA42TC

更新时间: 2024-09-27 19:21:23
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
2页 550K
描述
Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin,

FZTA42TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
外壳连接:COLLECTOR最大集电极电流 (IC):0.5 A
基于收集器的最大容量:6 pF集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):40
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
VCEsat-Max:0.5 VBase Number Matches:1

FZTA42TC 数据手册

 浏览型号FZTA42TC的Datasheet PDF文件第2页 
Not Recommended for New Design  
Please Use DZTA42  
SOT223 NPN SILICON PLANAR  
FZTA42  
HIGH VOLTAGE TRANSISTOR  
ISSUE 3 SEPTEMBER 2007  
FEATURES  
*
*
Suitable for video output stages in TV sets  
C
and switch mode power supplies  
High breakdown voltage  
E
C
COMPLIMENTARY TYPE – FZTA92  
B
PARTMARKING DETAIL – DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
IB  
VALUE  
UNIT  
V
Collector-Base Voltage  
300  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
V
5
100  
V
Base Current  
mA  
mA  
W
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
500  
Ptot  
2
Tj:Tstg  
-55 to +150  
°C  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
300  
300  
5
V
IC=100µA, IE=0  
IC=1mA, IB=0*  
IE=100µA, IC=0  
Collector-Emitter  
Breakdown Voltage  
V
Emitter-Base  
Breakdown Voltage  
V
Collector Cut-Off  
Current  
0.1  
VCB=200V, IE=0  
µA  
Emitter Cut-Off Current IEBO  
0.1  
0.5  
VEB=5V, IC=0  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
V
IC=20mA, IB=2mA  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
0.9  
V
IC=20mA, IB=2mA  
Static Forward Current hFE  
Transfer Ratio  
25  
40  
40  
IC=1mA, VCE=10V*  
IC=10mA, VCE=10V*  
IC=30mA, VCE=10V*  
Transition  
Frequency  
fT  
50  
MHz  
pF  
IC=10mA, VCE=20V  
f=20MHz  
Output Capacitance  
Cobo  
6
VCB=20V, f=1MHz  
* Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
For typical characteristics graphs see FMMTA42 datasheet.  

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