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FZT949 PDF预览

FZT949

更新时间: 2024-11-25 22:48:51
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管功率双极晶体管开关光电二极管局域网
页数 文件大小 规格书
5页 219K
描述
PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS

FZT949 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-223, 4 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.16Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):5.5 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
功耗环境最大值:3 W最大功率耗散 (Abs):3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.44 VBase Number Matches:1

FZT949 数据手册

 浏览型号FZT949的Datasheet PDF文件第2页浏览型号FZT949的Datasheet PDF文件第3页浏览型号FZT949的Datasheet PDF文件第4页浏览型号FZT949的Datasheet PDF文件第5页 
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
FZT948  
FZT949  
ISSUE 2 - NOVEMBER 1995  
FEATURES  
*
*
*
*
*
Extremely low equivalent on-resistance; RCE(sat)  
6 Amps continuous current  
Up to 20 Amps peak current  
Very low saturation voltage  
Excellent hFE characteristics specified upto 20 Amps  
C
E
C
B
PARTMARKING DETAILS — DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT948  
-40  
FZT949  
-50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
-20  
-30  
V
-6  
V
-20  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-6  
-5.5  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
TBA  

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