Datasheet > FZT949

FZT949

更新时间： 2024-11-26 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	38K
描述
PNP Silicon Planar High Current (High Performance) Transistor

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数据手册

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FZT949 数据手册

SMD Type

Transistors

PNP Silicon Planar High Current

(High Performance) Transistor

FZT949

SOT-223

Unit: mm

Features

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Extremely low equivalent on-resistance; RCE(sat).

6 Amps continuous current.

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Up to 20 Amps peak current.

Very low saturation voltage.

Excellent hFE characteristics specified upto 20 Amps.

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

-50

Unit

Collector-emitter voltage

Emitter-base voltage

-30

-6

Continuous collector current

-20

Peak pulse current

-5.5

Power dissipation

Ptot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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