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FZT753QTA PDF预览

FZT753QTA

更新时间: 2024-09-16 13:07:55
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管局域网
页数 文件大小 规格书
2页 114K
描述
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin, GREEN, PLASTIC PACKAGE-4

FZT753QTA 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC PACKAGE-4Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:13 weeks
风险等级:5.63其他特性:HIGH RELIABILITY
外壳连接:COLLECTOR最大集电极电流 (IC):2 A
集电极-发射极最大电压:100 V配置:SINGLE
最小直流电流增益 (hFE):25JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP参考标准:AEC-Q101
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

FZT753QTA 数据手册

 浏览型号FZT753QTA的Datasheet PDF文件第2页 
SOT223 PNP SILICON PLANAR  
MEDIUM POWER TRANSISTOR  
ISSUE 4– FEBRUARY 1996  
FZT753  
FEATURES  
C
*
*
Low saturation voltage  
Excellent hFE specified up to 2A  
E
COMPLEMENTARY TYPE –  
PARTMARKING DETAIL –  
FZT653  
FZT753  
C
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-120  
Collector-Emitter Voltage  
-100  
V
Emitter-Base Voltage  
-5  
V
Peak Pulse Current  
-6  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
-2  
2
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +150  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
TYP.  
MAX. UNIT  
V
CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V(BR)CBO  
-120  
-100  
-5  
IC=-100µA  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V
V
IC=-10mA*  
Emitter-Base Breakdown V(BR)EBO  
Voltage  
IE=-100µA  
Collector Cut-Off Current ICBO  
-0.1  
-10  
V
CB=-100V  
µA  
µA  
VCB=-100V,T =100°C  
Emitter Cut-Off Current  
IEBO  
-0.1  
VEB=-4V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
-0.17  
-0.30  
-0.3  
-0.5  
V
V
IC=-1A, IB=-100mA*  
IC=-2A, IB=-200mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
VBE(on)  
hFE  
-0.9  
-1.25  
V
I =-1A, IB=-100mA*  
Base-Emitter  
Turn-On Voltage  
-0.8  
-1.0  
V
I =-1A, VCE=-2V*  
Static Forward Current  
Transfer Ratio  
70  
100  
55  
200  
200  
170  
55  
IC=-50mA, VCE=-2V*  
IC=-500mA, VCE=-2V*  
IC=-1A, VCE=-2V*  
300  
30  
25  
IC=-2A, VCE =-2V*  
Transition Frequency  
fT  
100  
140  
MHz  
IC=-100mA, VCE=-5V  
f=100MHz  
Output Capacitance  
Switching Times  
Cobo  
ton  
pF  
ns  
ns  
VCB =-10V f=1MHz  
40  
IC=-500mA, VCC =-10V  
IB1=IB2=-50mA  
toff  
600  
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 236  

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