Datasheet > FZ825R33HE4D

FZ825R33HE4D

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	881K
描述
Enlarged Diode

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中文翻译

获取价格

数据手册

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FZ825R33HE4D 数据手册

FZ825R33HE4D

IHM-B module

IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

Features

• Electrical features

- V_CES= 3300 V

- I_{C nom}= 825 A / I_CRM= 1650 A

- Low Q_gand C_res

- High DC stability

- High short-circuit capability

- Low switching losses

- Low V_CE,sat

- T_vj,op= 150°C

- Trench IGBT 4

- Unbeatable robustness

- V_CE,satwith positive temperature coeﬀicient

- High current density

• Mechanical features

- AlSiC base plate for increased thermal cycling capability

- High power density

- Isolated base plate

- Package with CTI > 600

- RoHS compliant

Potential applications

• High-power converters

• Medium-voltage converters

• Motor drives

• Traction drives

• UPS systems

• Active frontend (energy recovery)

Product validation

• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068

Description

Datasheet

www.infineon.com

Please read the sections "Important notice" and "Warnings" at the end of this document

Revision 1.30

2022-11-22

12 3 4 5 6 7...14

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