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FXT705SM PDF预览

FXT705SM

更新时间: 2024-11-19 13:07:55
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号双极晶体管达林顿晶体管开关局域网
页数 文件大小 规格书
1页 31K
描述
Small Signal Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

FXT705SM 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PSSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.28
最大集电极电流 (IC):1 A集电极-发射极最大电压:120 V
配置:DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PSSO-G3元件数量:1
端子数量:3最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):160 MHzVCEsat-Max:1.3 V
Base Number Matches:1

FXT705SM 数据手册

  
PNP SILICON PLANAR MEDIUM POWER  
DARLINGTON TRANSISTOR  
ISSUE 1 – FEB 94  
FXT705  
FEATURES  
*
*
*
120 Volt VCEO  
Gain of 3K at IC=1 Amp  
Ptot= 1 Watt  
APPLICATIONS  
*
*
Lamp, solenoid and relay drivers  
B
C
E
Replacement of TO126 and TO220 darlingtons  
REFER TO ZTX705 FOR GRAPHS  
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-140  
Collector-Emitter Voltage  
Emitter-Base Voltage  
-120  
V
-10  
V
Peak Pulse Current  
-4  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
-1  
1
A
Ptot  
W
°C  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL  
V(BR)CBO  
MIN. TYP.  
-140  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=-100µA, IE=0  
IC=-10mA, IB=0*  
IE=-100µA, IC=0  
Collector-Emitter  
Breakdown Voltage  
V(BR)CEO  
V(BR)EBO  
ICBO  
-120  
-10  
Emitter-Base  
Breakdown Voltage  
Collector Cut-Off  
Current  
-0.1  
-10  
V
CB=-120V, IE=0  
µA  
µA  
VCB=-120V, T =100°C  
amb  
Collector Cut-Off  
Current  
ICES  
-10  
VCES=-80V  
µA  
Emitter Cut-Off  
Current  
IEBO  
-0.1  
VEB=-8V  
µA  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
-1.3  
-2.5  
V
V
IC=-1A, IB=-1mA*  
IC=-2A, IB=-2mA*  
Base-Emitter  
Saturation Voltage  
-1.8  
V
IC=-1A, IB=-10mA*  
Base-Emitter Turn-On VBE(on)  
Voltage  
-1.7  
V
IC=-1A, VCE=-5V*  
Static Forward  
Current Transfer Ratio  
hFE  
3k  
3k  
3k  
2k  
IC=-10mA, VCE=-5V*  
IC=-100mA, VCE=-5V*  
IC=-1A, VCE=-5V*  
30k  
IC=-2A, VCE=-5V*  
Transition  
Frequency  
fT  
160  
MHz  
IC=-100mA, VCE=-10V  
f=20MHz  
3-55  

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