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FXT69STOE PDF预览

FXT69STOE

更新时间: 2024-11-19 17:05:43
品牌 Logo 应用领域
美台 - DIODES 晶体管
页数 文件大小 规格书
1页 42K
描述
Small Signal Bipolar Transistor, 1A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC, E-LINE PACKAGE-3

FXT69STOE 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.24最大集电极电流 (IC):1 A
集电极-发射极最大电压:20 V配置:SINGLE
最小直流电流增益 (hFE):85JESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
标称过渡频率 (fT):150 MHzBase Number Matches:1

FXT69STOE 数据手册

  

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