FXT690B

更新时间： 2024-11-23 03:38:11

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	50K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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FXT690B 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 1 MAY 94

FXT690B

FEATURES

45 Volt V_CEO

Gain of 400 at I_C=1 Amp

Very low saturation voltage

APPLICATIONS

Darlington replacement

Siren Drivers

Battery powered circuits

Motor drivers

E-Line

TO92 Compatible

REFER TO ZTX690B FOR GRAPHS

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Practical Power Dissipation*

I_C

P_totp

P_tot

1.5

Power Dissipation at T_amb=25°C

derate above 25°C

5.7

mW/°C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT CONDITIONS.

Collector-Base Breakdown

Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_C=100µA

I_C=10mA*

I_E=100µA

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

I_CBO

0.1

V_CB=35V

µA

I_EBO

V_EB=4V

Collector-Emitter Saturation

Voltage

V_CE(sat)

0.1

0.5

I_C=0.1A, I_B=0.5mA*

I_C=1A, I_B=5mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

0.9

I_C=1A, I_B=10mA*

Base-Emitter

Turn-On Voltage

0.9

IC=1A, V_CE=2V*

Static Forward Current

Transfer Ratio

500

400

150

I_C=100mA, V_CE=2V*

I_C=1A, V_CE=2V*

I_C=2A, V_CE=2V*

3-52

中文翻译

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