Datasheet > FXT657STZ

FXT657STZ

更新时间： 2024-11-19 21:00:07

品牌	Logo	应用领域
捷特科 - ZETEX		开关晶体管
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1页	26K
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数据手册

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FXT657STZ 数据手册

NPN SILICON PLANAR

FXT657

MEDIUM POWER TRANSISTOR

ISSUE 1 FEB 94

FEATURES

300 Volt V_CEO

0.5 Amps continuous current

P_tot= 1 Watt

APPLICATIONS

Telephone dialler circuits

Video output drivers

E-Line

REFER TO ZTX657 FOR GRAPHS

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

300

Collector-Emitter Voltage

Emitter-Base Voltage

300

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

0.5

P_tot

°C

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

300

I_C=100µA, I_E=0

Collector-Emitter

Breakdown Voltage

I_C=10mA, , I_B=0*

I_E=100µA, I_C=0

V_CB=200V, I_E=0

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

100

Emitter Cut-Off Current I_EBO

100

0.5

V_EB=3V, I_C=0

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

I_C=100mA, I_B=10mA*

Base-Emitter

Saturation Voltage

I_C=100mA, I_B=10mA*

IC=100mA, V_CE=5V*

Base-Emitter

Turn-On Voltage

Static Forward Current h_FE

Transfer Ratio

I_C=10mA, V_CE=5V*

I_C=100mA, V_CE=5V*

Transition

Frequency

f_T

MHz

I_C=10mA, V_CE=20V

f=20MHz

Output Capacitance

C_obo

V_CB=20V, f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

3-50

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