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FXT653STOE PDF预览

FXT653STOE

更新时间: 2024-11-19 17:05:39
品牌 Logo 应用领域
美台 - DIODES 开关晶体管
页数 文件大小 规格书
1页 42K
描述
Small Signal Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, E-LINE PACKAGE-3

FXT653STOE 技术参数

生命周期:Obsolete包装说明:PLASTIC, E-LINE PACKAGE-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.16Is Samacsys:N
最大集电极电流 (IC):2 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz
Base Number Matches:1

FXT653STOE 数据手册

  

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