Datasheet > FX901

FX901

更新时间： 2024-09-12 22:32:15

品牌	Logo	应用领域
三洋 - SANYO		晶体转换器晶体管开关光电二极管
页数	文件大小	规格书
5页	170K
描述
DC-DC Converter Applications

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中文翻译

获取价格

技术参数
数据手册

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FX901 技术参数

生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-F6
针数：	5	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.83
Is Samacsys：	N	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	3 A	集电极-发射极最大电压：	11 V
配置：	SINGLE WITH BUILT-IN FET AND DIODE	最小直流电流增益 (hFE)：	70
JESD-30 代码：	R-PDSO-F6	元件数量：	1
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	400 MHz
Base Number Matches：	1

FX901 数据手册

Ordering number:EN5387

FX901

PNP Epitaxial Planar Silicon Transistor

N-Channel MOS Silicon FET

Silicon Schottky Barrier Diode

DC-DC Converter Applications

Features

Package Dimensions

unit:mm

· Composite type with a PNP transistor and a 2.5V

drive N-channel MOSFET with a built-in low

forward-voltage Schottky barrier diode faciliteting

high-density mounting.

2133

[FX901]

1:Base

2:Emitter

Electrical Connection

3:Anode, Source

4:Gate

5, 6:Common

(Collector, Cathode, Drain)

SANYO:XP5

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Allowable Power Dissipation

Tc=25˚C, 1 unit

1.5

Mounted on ceramic board (750mm²×0.8mm) 1 unit

Mounted on ceramic board (750mm²×0.8mm)

Total Power Dissipation

Storage Temperature

[TR]

Tstg

–55 to +150

˚C

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

–15

–11

–7

CBO

CEO

EBO

–3

Collector Current (Pulse)

Base Current

–5

–600

150

˚C

Junction Temperature

[MOSFET]

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Channel Temperature

[SBD]

±10

DSS

GSS

PW≤10µs, duty cycle≤1%

Tch

150

˚C

Average Rectified Current

500

Continued on next page.

· Marking:901

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/32996YK (KOTO) TA-0622 No.5387-1/5

12 3 4 5

中文翻译

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