Datasheet > FX30B-5S-3.81DS

FX30B-5S-3.81DS

更新时间： 2024-12-01 18:09:31

品牌	Logo	应用领域
广濑 - HRS		插座连接器
页数	文件大小	规格书
2页	184K
描述
连接器类型:插座;安全规格:C-UL/CSA, UL, TüV;开口间距:3.81 mm;安装间距:3.81 mm;PIN数:5;浮动范围 (XY) (mm):± 0.3 mm;有效交配长度 (Z

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FX30B-5S-3.81DS 数据手册

(3)

Applicable standard

Voltage

UL : UL1977, C-UL : CSA22.2 No.182.3-M1987, TÜV : EN61984:2009

Operating

-55 C to 105 C ⁽¹⁾

250 V AC/DC(UL/C-UL)

Temperature Range

150V AC/DC(TÜV)

Operating

Relative Humidity 85% max

(Not dewed)

Humidity Range

Storage

Temperature Range

RATING

20 A (AMBIENT TEPM 25℃)

13 A (UL/C-UL)

-10 C to 60 C ⁽²⁾

Current

40 % to 70 % ⁽²⁾

Storage Humidity Range

According to drawing.

15 A (TÜV)

SPECIFICATIONS

TEST METHOD

ITEM

REQUIREMENTS

QT AT

CONSTRUCTION

General Examination

Marking

Visually and by measuring instrument.

Confirmed visually.

ELECTRIC CHARACTERISTICS

Contact Resistance

Insulation Resistance

Voltage Proof

10 mA(DC or 1000Hz)

2 mΩMAX.

－

250 V DC.

1000 MΩMIN.

750 V AC for 1 min.

No flashover or breakdown.

MECHANICAL CHARACTERISTICS

Insertion and

Withdrawal Forces

Mechanical Operation

Measured by applicable connector.

Insertion Force:

Withdrawal Force:

25 N MAX.

1.0 N MIN.

－

100 times insertions and extractions.

① Contact Resistance: 5 mΩMAX.

② No damage, crack and looseness of parts.

Vibration

Shock

Frequency 10 to 55 to 10Hz, approx 5min

Single amplitude : 0.75 mm, 10 cycles

for 3 axial directions.

① No electrical discontinuity of 1 s.

② No damage, crack and looseness of parts.

－

490 m/s², duration of pulse 11 ms,

3 times to both directions in 3 axial directions.

ENVIRONMENTAL CHARACTERISTICS

Damp Heat

(Steady State)

Exposed at 40±2 C, 90 ～ 95 %, 96 ±4h.

① Contact Resistance: 5mΩ MAX.

－

② Insulation Resistance: 1000 M MIN.

③ No damage, crack and looseness of parts.

Rapid Change of

Temperature

Temperature -55

→

+105 C

30 min.

Time

→

under 5 cycles.

(Relocation time to chamber: within 2～3 MIN)

Dry heat

Cold

Exposed at +105±2℃ for 96±4h.

－

Exposed at -55±2℃ for 96±4h.

Sulfur Dioxide

Exposed at 25±2℃, 75±5%RH,

25 PPM for 96h±4h.

① Contact Resistance: 5mΩ MAX.

② No defect such as corrosion which impairs

the function of connector.

No deformation of case of excessive looseness

of the terminal.

－

Resistance to

Soldering Heat

Solder bath : Solder temperature 260±5℃

for immersion, duration 10±1sec.

Soldering irons : 380℃ MAX. for 10 sec.

A new uniform coating of solder shall cover a

minimum of 95 % of the surface being immersed.

Solderability

Soldered at solder temperature 240±3℃

for immersion, duration 3 sec.

－

COUNT

DESCRIPTION OF REVISIONS

DESIGNED

TS.OONO

CHECKED

HT.YAMAGUCHI

HS.OKAWA

DATE

△

DIS-F-00002346

⁽¹⁾Include temperature rise caused by current-carrying.

⁽²⁾“Storage” means a long-term storage state

17.05.12

13.03.07

REMARKS

APPROVED

CHECKED

DESIGNED

DRAWN

KI.HIROKAWA

DK.AIMOTO

for the unused product before assembly to PCB.

⁽³⁾Pollution degree:2 type of terminals :dip solder contacts.

Unless otherwise specified, refer to JIS-C-5402,IEC60512.

Note QT:Qualification Test AT:Assurance Test X:Applicable Test

DK.AIMOTO

DRAWING NO.

ELC4-347279-00

FX30B-5S-3.81DS

PART NO.

CODE NO.

SPECIFICATION SHEET

HIROSE ELECTRIC CO., LTD.

△

1/2

CL570-3603-4-00

FORM HD0011-2-1

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与FX30B-5S-3.81DS相关器件

型号	品牌	获取价格	描述	数据表
FX30B-5S-3.81DSA	HRS	获取价格	连接器类型:插座;安全规格:C-UL/CSA, UL, TüV;开口间距:3.81 mm;
FX30KM-03	POWEREX	获取价格	Power Field-Effect Transistor, 30A I(D), 30V, 0.071ohm, 1-Element, P-Channel, Silicon, Met
FX30KM06	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| SOT-186
FX30KM2	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 30A I(D) \| SOT-186
FX30KM-2	POWEREX	获取价格	Power Field-Effect Transistor, 30A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide
FX30KM3	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 150V V(BR)DSS \| 30A I(D) \| SOT-186
FX30KM-3	POWEREX	获取价格	Power Field-Effect Transistor, 30A I(D), 150V, 1-Element, P-Channel, Silicon, Metal-oxide
FX30KMH03	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 30V V(BR)DSS \| 30A I(D) \| SOT-186
FX30KMH06	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 30A I(D) \| SOT-186
FX30KMH-06	POWEREX	获取价格	Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Meta

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