Datasheet > FX203

FX203

更新时间： 2024-09-14 22:32:15

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
3页	106K
描述
Ultrahigh-Speed Switching Applications

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FX203 数据手册

Ordering number:EN5264

FX203

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

unit:mm

· Low ON-resistance.

· Ultrahigh-speed switching.

· Low-voltage drive.

2121

[FX203]

Switching Time Test CIrcuit

1:No Contact

2:Gate

3:Source

4:No Contact

5:Drain

6:Drain

SANYO:XP5

(Bottom view)

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

–30

±20

–4

DSS

Gate-to-Source Voltage

Drain Current (DC)

GSS

Drain Current (Pulse)

Allowable Power Dissipation

PW≤10µs, duty cycle≤1%

–16

˚C

Tc=25˚C

Mounted on ceramic board (750mm²×0.8mm)

Channel Temperature

Storage Temperature

Tch

150

Tstg

–55 to +150

Electrical Characteristics at Ta = 25˚C

Ratings

typ

Parameter

D-S Breakdown Voltage

Symbol

Conditions

Unit

min

–30

max

=–1mA, V =0

D GS

µA

(BR)DSS

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

=–30V, V =0

–100

±10

DSS

=±16V, V =0

GSS

=–10V, I =–1mA

–1.0

1.5

–2.5

GS(off)

| Y

Forward Transfer Admittance

Static Drain-to-Source ON-State Resistance

=–10V, I =–2A

=–2A, V =–10V

120

210

370

230

160

290

mΩ

DS(on)

=–2A, V =–4V

D GS

DS(on)

Ciss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

=–10V, f=1MHz

Coss

Crss

=–10V, f=1MHz

See specified Test Circuit

d(on)

Turn-OFF Delay Time

Fall Time

135

125

–1.0

d(off)

Diode Forward Voltage

=–4A, V =0

S GS

–1.2

· Marking:203

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/O2196YK (KOTO) TA-0041 No.5264-1/3

12 3

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