http://www.fujielectric.com/products/semiconductor/
IGBT Modules
2MBI800VG-170E
IGBT MODULE (V series)
1700V / 800A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at T =25°C unless otherwise specified)
C
Items
Symbols
Conditions
Maximum ratings
Units
Collector-Emitter voltage
Gate-Emitter voltage
V
CES
1700
±20
V
V
VGES
T
T
C
C
=25°C
=100°C
1200
800
1600
800
I
C
Continuous
1ms
Collector current
I
-I
C pulse
A
C
-IC pulse
1ms
1 device
1600
5760
175
Collector power dissipation
Junction temperature
Operating junction temperature (under switching conditions)
Storage temperature
P
C
W
°C
T
T
T
j
jop
stg
150
-40 ~ +150
4000
5.75
Isolation voltage between terminal and copper base (*1)
V
iso
AC : 1min.
M6
VAC
N m
Mounting
Screw torque (*2)
Main Terminals
Sense Terminals
M8
M4
10
2.5
Note *1:All terminals should be connected together when isolation test will be done.
Note *2: Recommendable Value :
Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)
Electrical characteristics (at T= 25°C unless otherwise specified)
j
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
-
max.
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
I
I
CES
GES
V
V
V
GE = 0V, VCE = 1700V
CE = 0V, VGE = ±20V
-
-
1.0
mA
nA
V
-
1600
V
GE (th)
CE = 20V, I
C
= 800mA
6.0
-
-
-
-
-
-
-
-
6.5
7.0
VCE (sat)
Tj
Tj
Tj
Tj
Tj
Tj
=25°C
2.21
2.61
2.66
2.00
2.40
2.45
2.19
79
2.49
(main
terminal)
=125°C
=150°C
=25°C
=125°C
=150°C
-
-
VGE = 15V
Collector-Emitter saturation voltage
V
I
C
= 800A
2.25
VCE (sat)
-
-
-
-
(chip)
Internal gate resistance
Input capacitance
Int
RG
Ω
nF
Cies
VCE = 10V, VGE = 0V, f = 1MHz
t
t
t
t
on
V
CC = 900V
= 800A
= 75nH
T
R
R
j
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
2.41
0.89
2.13
0.55
2.02
2.22
2.19
1.80
2.00
1.98
0.36
0.268
-
-
-
-
Turn-on
Turn-off
r
IC
Gon = 2.4Ω
Goff = 0.82Ω
µs
V
off
f
L
m
V
GE = ±15V
V
(main
terminal)
F
Tj
Tj
Tj
Tj
Tj
Tj
=25°C
2.40
-
-
=125°C
=150°C
=25°C
=125°C
=150°C
VGE = 0V
Forward on voltage
I
F
= 800A
2.15
V
(chip)
F
-
-
-
-
Reverse recovery
Lead resistance, terminal-chip
trr
I
F
= 800A, T
j
= 125°C
µs
mΩ
R
lead
Thermal resistance characteristics
Items
Characteristics
Symbols
Conditions
Units
min.
typ.
max.
IGBT
FWD
-
-
-
-
-
0.026
0.045
-
Thermal resistance (1device)
R
th(j-c)
th(c-f)
°C/W
Contact thermal resistance (1device)
R
with Thermal Compound (*3)
0.006
Note *3: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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