Datasheet > 29F002

29F002

更新时间： 2022-11-25 16:16:08

品牌	Logo	应用领域
富士通 - FUJITSU		/
页数	文件大小	规格书
46页	445K
描述
2M (256K X 8) BIT

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数据手册

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29F002 数据手册

FUJITSU SEMICONDUCTOR

DATA SHEET

DS05-20868-3E

FLASH MEMORY

CMOS

2M (256K × 8) BIT

MBM29F002TC^-55/-70/-90/MBM29F002BC^-55/-70/-90

■ FEATURES

•

Single 5.0 V read, write, and erase

Minimizes system level power requirements

Compatible with JEDEC-standard commands

Pinout and software compatible with single-power supply Flash

Superior inadvertent write protection

•

32-pin TSOP(I) (Package Suffix: PFTN-Normal Bend Type, PFTR-Reverse Bend Type)

32-pin PLCC (Package Suffix: PD)

•

Minimum 100,000 write/erase cycles

High performance

55 ns maximum access time

•

Sector erase architecture

One 16K byte, two 8K bytes, one 32K byte, and three 64K bytes

Any combination of sectors can be erased. Also supports full chip erase

Boot Code Sector Architecture

T = Top sector

B = Bottom sector

•

Embedded Erase™ Algorithms

Automatically pre-programs and erases the chip or any sector

Embedded Program™ Algorithms

Automatically programs and verifies data at specified address

Data Polling and Toggle Bit feature for detection of program or erase cycle completion

Low V^CCwrite inhibit ≤ 3.2 V

•

Hardware RESET pin

Resets internal state machine to the read mode

Erase Suspend/Resume

Supports reading or programming data to a sector not being erased

Sector protection

Hardware method that disables any combination of sector from write or erase operation

Temporary sector unprotection

•

Temporary sector unprotection via the RESET pin

Embedded Erase™, Embedded Program™ and ExpressFlash™ are trademarks of Advanced Micro Devices, Inc.

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