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1MBI300S-120 PDF预览

1MBI300S-120

更新时间: 2024-02-28 23:12:46
品牌 Logo 应用领域
富士通 - FUJITSU 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
4页 278K
描述
1-Pack IGBT 1200V 1x300A

1MBI300S-120 技术参数

生命周期:Obsolete包装说明:FLANGE MOUNT, R-XUFM-X4
Reach Compliance Code:unknown风险等级:5.82
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):300 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):1900 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):1000 ns标称接通时间 (ton):1200 ns
VCEsat-Max:2.6 VBase Number Matches:1

1MBI300S-120 数据手册

 浏览型号1MBI300S-120的Datasheet PDF文件第2页浏览型号1MBI300S-120的Datasheet PDF文件第3页浏览型号1MBI300S-120的Datasheet PDF文件第4页 
1-Pack IGBT  
1200V  
1MBI 300S-120  
1x300A  
IGBT MODULE ( S-Series )  
I Outline Drawing  
I Features  
NPT-Technology  
Square SC SOA at 10 x IC  
High Short Circuit Withstand-Capability  
Small Temperature Dependence of the Turn-Off  
Switching Loss  
Low Losses And Soft Switching  
I Applications  
High Power Switching  
A.C. Motor Controls  
D.C. Motor Controls  
Uninterruptible Power Supply  
I Maximum Ratings and Characteristics  
I Equivalent Circuit  
Absolute Maximum Ratings ( Tc=25°C)  
Items  
Collector-Emitter Voltage  
Gate -Emitter Voltage  
Symbols  
VCES  
VGES  
IC  
Ratings  
1200  
Units  
V
20  
Continuous 25°C / 80°C  
400 / 300  
800 / 600  
300  
Collector  
Current  
1ms  
25°C / 80°C  
IC PULSE  
-IC  
-IC PULSE  
A
Continuous  
1ms  
600  
Max. Power Dissipation  
Operating Temperature  
Storage Temperature  
Isolation Voltage  
PC  
2100  
W
Tj  
Tstg  
+150  
°C  
-40 +125  
A.C. 1min.  
Vis  
2500  
V
1
*
Mounting *2  
Terminals *2  
Terminals *2  
3.5  
4.5  
1.7  
Screw Torque  
Nm  
Note: 1*: All Terminals should be connected together when isolation test will be done.  
2*: Recommendable Value: Mounting 2.5 3.5 Nm (M5) or (M6) ; Terminal 3.5 4.5 Nm (M6), 1.3 1.7 Nm (M4)  
Electrical Characteristics ( at Tj=25°C )  
Items  
Symbols  
Test Conditions  
VGE=0V VCE=1200V  
VCE=0V VGE 20V  
Min.  
Typ.  
Max.  
4.0  
800  
8.5  
2.6  
Units  
mA  
Zero Gate Voltage Collector Current  
Gate-Emitter Leackage Current  
Gate-Emitter Threshold Voltage  
ICES  
nA  
IGES  
=
VGE=20V IC=300mA  
5.5  
7.2  
2.3  
2.8  
VGE(th)  
Tj = 25°C  
Tj =125°C  
V
Collector-Emitter Saturation Voltage  
VGE=15V IC=300A  
VCE(sat)  
Input Capacitance  
VGE=0V  
36’000  
7’500  
6’600  
0.35  
0.25  
0.10  
0.45  
0.08  
Cies  
Coes  
Cres  
tON  
tr,x  
Output Capacitance  
VCE=10V  
f=1MHz  
VCC= 600V  
IC = 300A  
pF  
Reverse Transfer Capacitance  
1.2  
0.6  
Turn-on Time  
tr,i  
VGE  
RG  
=
=
15V  
µs  
1.0  
0.3  
tOFF  
2.7Ω  
Turn-off Time  
Inductive Load  
tf  
Tj = 25°C  
Tj =125°C  
2.3  
2.0  
3.0  
Diode Forward On-Voltage  
Reverse Recovery Time  
IF=300A; VGE=0V  
IF=300A  
V
VF  
trr  
350  
ns  
Thermal Characteristics  
Items  
Symbols  
Rth(j-c)  
Test Conditions  
Min.  
Typ.  
Max.  
0.06  
0.17  
Units  
IGBT  
Thermal Resistance  
Diode  
°C/W  
Rth(j-c)  
With Thermal Compound  
0.0125  
Rth(c-f)  

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