5秒后页面跳转
7MBP150RTB060 PDF预览

7MBP150RTB060

更新时间: 2024-02-17 23:46:21
品牌 Logo 应用领域
富士电机 - FUJI 运动控制电子器件信号电路电动机控制
页数 文件大小 规格书
9页 785K
描述
IPM-R3

7MBP150RTB060 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.6
Is Samacsys:N模拟集成电路 - 其他类型:AC MOTOR CONTROLLER
JESD-30 代码:R-XXMA-X22功能数量:1
端子数量:22最大输出电流:300 A
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY认证状态:Not Qualified
最大供电电压 (Vsup):16.5 V最小供电电压 (Vsup):13.5 V
标称供电电压 (Vsup):15 V表面贴装:NO
技术:HYBRID端子形式:UNSPECIFIED
端子位置:UNSPECIFIEDBase Number Matches:1

7MBP150RTB060 数据手册

 浏览型号7MBP150RTB060的Datasheet PDF文件第2页浏览型号7MBP150RTB060的Datasheet PDF文件第3页浏览型号7MBP150RTB060的Datasheet PDF文件第4页浏览型号7MBP150RTB060的Datasheet PDF文件第5页浏览型号7MBP150RTB060的Datasheet PDF文件第6页浏览型号7MBP150RTB060的Datasheet PDF文件第7页 
7MBP150RTB060  
IPM-R3 series  
600V / 150A 7 in one-package  
Features  
· Temperature protection provided by directly detecting the junction  
temperature of the IGBTs  
· Low power loss and soft switching  
· High performance and high reliability IGBT with overheating protection  
· Higher reliability because of a big decrease in number of parts in  
built-in control circuit  
Maximum ratings and characteristics  
Absolute maximum ratings(at Tc=25°C unless otherwise specified)  
Symbol  
Rating  
Max.  
Unit  
Item  
Min.  
V
DC  
VDC  
450  
500  
400  
600  
150  
300  
150  
431  
50  
0
0
V
Bus voltage  
Surge  
VDC(surge)  
V
(between terminal P and N)  
Collector-Emitter voltage  
Collector current  
Shortoperating VSC  
200  
V
VCES *1  
0
A
DC  
IC  
-
A
1ms  
ICP  
-IC  
-
A
Duty=68.2%  
*2  
-
W
A
Collector power dissipation One transistor  
PC *3  
IC  
-
Collector current  
DC  
-
A
1ms  
ICP  
100  
50  
-
A
Forward Current of Diode  
IF  
-
W
V
Collector power dissipation One transistor  
Input voltage of power supply for Pre-Driver  
Input signal voltage  
PC *3  
VCC *4  
Vin *5  
Iin  
198  
20  
-
-0.5  
V
Vcc+0.5  
3
-0.5  
mA  
V
Input signal current  
-
Alarm signal voltage  
VALM *6  
IALM *7  
Tj  
Vcc  
20  
-0.5  
mA  
°C  
°C  
°C  
kV  
N·m  
N·m  
Alarm signal current  
-
-
Fig.1 Measurement of case temperature  
Junction temperature  
150  
100  
Operating case temperature  
Storage temperature  
Top  
-20  
Tstg  
125  
AC2.5  
-40  
Isolating voltage (Case-Terminal)  
Viso *8  
-
-
-
3.5 *9  
3.5 *9  
Screw torque  
Mounting (M5)  
Terminal (M5)  
Note  
*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB,  
N and U or V or W or DB.  
*2 : 125°C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.47/(150 x 2.6)x100=68.2%  
*3 : Pc=125°C/IGBT Rth(j-c)=125/0.29=431W [Inverter]  
Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Break]  
*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.  
*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.  
*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.  
*7 : IALM shall be applied to the input current to terminal No. 16.  
*8 : 50Hz/60Hz sine wave 1 minute.  
*9 : Recommendable Value : 2.5 to 3.0 N·m  
Weight  
Item  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Weight  
*9 : (For 1 device, Case is under the device)  
Wt  
-
450  
-
g

与7MBP150RTB060相关器件

型号 品牌 描述 获取价格 数据表
7MBP150RTB-060 ETC 7 IPM IGBT

获取价格

7MBP150RTE060 FUJI Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel

获取价格

7MBP150RTJ-060 ETC IGBTs

获取价格

7MBP150TEA060 FUJI Econo IPM series

获取价格

7MBP150TEA-060 ETC IGBTs

获取价格

7MBP150VDA060-50 FUJI IGBT MODULE (V series) 600V / 150A / IPM

获取价格